Enhanced thermoelectric performance enabled by compositing ZrO2 in n-type SiGe alloy with low thermal conductivity

Meng-Fei Wang ¹Hua-Jun Lai ²Ji-Sheng Liang ¹Jun-Liang Chen ³Wang-Yang Ding ¹Qi Zhou ¹Ying Peng ⁴Cheng-Yan Liu ³Lei Miao¹

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作者信息

1. Guangxi Key Laboratory for Relativity Astrophysics,State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures,School of Physical Science and Technology,Guangxi University,Nanning 530004,China
2. Guangxi Academy of Sciences,Nanning 530007,China
3. Key Laboratory of Information Material,Engineering Research Center of Electronic Information Materials and Devices,Guilin University of Electronic Technology,Ministry of Education,Guilin 541004,China
4. Key Laboratory of Information Material,Engineering Research Center of Electronic Information Materials and Devices,Guilin University of Electronic Technology,Ministry of Education,Guilin 541004,China;Guangxi Key Laboratory of Precision Navigation Technology and Application,School of Information and Communication,Guilin University of Electronic Technology,Guilin 541004,China
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Abstract

SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long lifespan.How-ever,the intrinsically high thermal conductivity of Si-based materials also results in poor TE properties.In this inves-tigation,a zirconia(ZrO2)composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE performance.After mechanical alloying and spark plasma sintering(SPS)processes,the ZrO2 induced the formation of nanopores in the SiGe matrix via phosphorus adsorption.Moreover,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m-1·K-1 at 873 K.Additionally,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity.The power factor didn't deteriorate significantly,either,as its maximum of～3.43 mW·m-1-K-2 was achieved at 873 K with(Si0.8Ge0.2)0.097 P0.03(ZrO2)0.003 In short,a peak figure of merit(ZT)of～1.27 at 873 K and an average ZT～0.7 from 323 to 873 K were obtained.This study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO2,illustrating a novel strategy to optimize the TE properties of bulk materials.

Key words

Thermoelectric/SiGe alloy/ZrO2 composting/P element adsorption/nanopores

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基金项目

National Key Research and Development Program of China(2022YFE0119100)

National Key Research and Development Program of China(2017YFE0198000)

National Natural Science Foundation of China(U21A2054)

National Natural Science Foundation of China(52273285)

National Natural Science Foundation of China(52061009)

National Natural Science Foundation of China(52262032)

Guangxi Science and Technology Planning Project(AD21220056)

出版年

2024

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDEI

影响因子：0.801

ISSN：1001-0521

参考文献量45

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