首页|Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

Achieving high carrier mobility and low lattice thermal conductivity in GeTe-based alloys by cationic/anionic co-doping

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The Ⅳ-Ⅵ compound GeTe is considered as a promising alternative to the toxic PbTe for high-efficiency mid-temperature thermoelectric applications.However,pristine GeTe suffers from a high concentration of Ge vacancies,resulting in an excessively high hole concen-tration(＞1 × 1021 cm-3),which greatly limits its thermoelectric enhancement.To address this issue,CuBiTe2 alloying is introduced to increase the formation energy of Ge vacancies in GeTe,thereby inhibiting the high carrier concentration.The carrier scattering caused by the electronegativity difference between different elements is suppressed due to the similar electronegativity of Cu and Ge atoms.A relatively high hole mobility is obtained,which ultimately leads to a high power factor.Addition-ally,by introducing Se as an alloying element at the anionic site in GeTe,dense point defects with mass/strain-field fluctuations are induced.This contributes to the strengthening of phonon scattering,thereby reducing the lattice thermal conductivity from 1.44 W·m-1·K-1 for pristine GeTe to 0.28 W·m-1·K-1 for Ge0.95Cu0.05Bi0.05-Te0.9Se0.15 compound at 623 K.

GeTeCarrier mobilityCuBiTe2 alloyingLattice thermal conductivityThermoelectric properties

Xiao-Qiang Wang、Xiao-Quan Hu、Jun-Yan Lin、Chu-Bin Li、Xiao-Tong Yu、Qi-Yong Chen、Li-Li Xi、Qi-Shuo Yang、Han Li、Ji-Ye Zhang、Shuan-Kui Li、Kai Guo

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School of Physics and Materials Science,Guangzhou University,Guangzhou 510006,China

Research Center for Advanced Information Materials(CAIM),Huangpu Research & Graduate School of Guangzhou University,Sino-Singapore Guangzhou Knowledge City,Guangzhou 510555,China

School of Materials Science and Engineering,Shanghai University,Shanghai 200444,China

Materials Genome Institute,Shanghai University,Shanghai 200444,China

School of Mechanical and Mining Engineering,University of Queensland,Brisbane,QLD 4072,Australia

Key Laboratory of Si-Based Information Materials & Devices and Integrated Circuits Design,Department of Education of Guangdong Province,Guangzhou 510006,China

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国家重点研发计划国家自然科学基金Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou

2018YFA0702100U21A2054202255464

2024

10.1007/s12598-023-02606-4

稀有金属(英文版)
中国有色金属学会

稀有金属(英文版)

CSTPCDEI
影响因子：0.801
ISSN：1001-0521
年,卷(期)：2024.43(6)
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