首页|Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films
Texture and Se vacancy optimization induces high thermoelectric performance in Bi2Se3 flexible thin films
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Bi2Se3-based flexible thin film with high ther-moelectric performance is promising for the waste heat recovery technology.In this work,a novel post-seleniza-tion method is employed to prepare n-type Bi2Se3 flexible thin films with highly textured structure.The strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization temperature.The highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of～290.47 S·cm-1 at 623 K.Correspondingly,a high Seebeck coefficient(＞110 μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy engineering.Consequently,a high power factor of 3.49 μW·cm-1·K-2 at 623 K has been achieved in as-prepared highly-bendable Bi2Se3 flexible thin films sel-enized at 783 K.This study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi2Se3 flexible thin films,and correspondingly achieves high thermoelectric performance.
School of Machinery and Automation,Weifang University,Weifang 261061,China
Australian Institute for Bioengineering and Nanotechnology,The University of Queensland,Brisbane 4072,Australia
Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China
School of Materials Science and Engineering,Inner Mongolia University of Technology,Hohhot 010051,China
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Natural Science Foundations of Shandong Province中国博士后科学基金ShangRao City of Jiangxi Province(China)Doctoral Research Initiation Fund of Weifang University
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