Long-wave infrared emission properties of strain-balanced InAs/InxGa1-xAsySb1-y type-Ⅱ superlattice on different substrates

Chao Shi ¹Xuan Fang ¹Hong-Bin Zhao ²Deng-Kui Wang ¹Xi Chen ¹Dan Fang ¹Dong-Bo Wang ³Xiao-Hua Wang ¹Jin-Hua Li¹

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作者信息

1. State Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China
2. State Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China;State Key Laboratory of Advanced Materials for Smart Sensing,China General Research Institute for Nonferrous Metals,Beijing 100088,China
3. State Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China;Department of Opto-Electronic Information Science,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China
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Abstract

High-performance type-Ⅱ superlattices of Ⅲ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great signifi-cance for practical applications.In this work,strain-balanced and high-quality InAs/InxGa1-xAsySb1-y superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on InAs sub-strate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geo-metric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element com-position and interface roughness of superlattices on different substrates,the superlattices grown on InAs substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the InAs substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

Key words

Photoluminescence/Alloy compositions fluctuations/InAs(Sb)/InxGa1-xAsySb1-y/Type-Ⅱsuperlattice/Substrate

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基金项目

National Natural Science Foundation of China(62074018)

National Natural Science Foundation of China(62174015)

National Natural Science Foundation of China(62275032)

Developing Project of Science and Technology of Jilin Province(20210509061RQ)

Natural Science Foundation of Jilin Province(20210101473JC)

National Key R&D Program of China(2021YFB3201901)

Natural Science Foundation of Chongqing China(cstc2021jcyjmsxmX1060)

出版年

2024

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDEI

影响因子：0.801

ISSN：1001-0521

参考文献量4

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