Long-wave infrared emission properties of strain-balanced InAs/InxGa1-xAsySb1-y type-Ⅱ superlattice on different substrates

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外文摘要：High-performance type-Ⅱ superlattices of Ⅲ-Ⅴsemiconductor materials play an important role in the development and application of infrared optoelectronic devices.Improving the quality of epitaxial materials and clarifying the luminescent mechanism are of great signifi-cance for practical applications.In this work,strain-balanced and high-quality InAs/InxGa1-xAsySb1-y superlattices without lattice mismatch were achieved on InAs and GaSb substrates successfully.Superlattices grown on InAs sub-strate could exhibit higher crystal quality and surface flatness based on high-resolution X-ray diffraction(HRXRD)and atomic force microscopy(AFM)measurements'results.Moreover,the strain distribution phenomenon from geo-metric phase analysis indicates that fluctuations of alloy compositions in superlattices on GaSb substrate are more obvious.In addition,the optical properties of superlattices grown on different substrates are discussed systematically.Because of the difference in fluctuations of element com-position and interface roughness of superlattices on different substrates,the superlattices grown on InAs substrate would have higher integral intensity and narrower full-width at half maximum of long-wave infrared emission.Finally,the thermal quenching of emission intensity indicates that the superlattices grown on the InAs substrate have better recombination ability,which is beneficial for increasing the operating temperature of infrared optoelectronic devices based on this type of superlattices.

外文关键词：

PhotoluminescenceAlloy compositions fluctuationsInAs(Sb)/InxGa1-xAsySb1-yType-ⅡsuperlatticeSubstrate

作者：

Chao Shi、Xuan Fang、Hong-Bin Zhao、Deng-Kui Wang、Xi Chen、Dan Fang、Dong-Bo Wang、Xiao-Hua Wang、Jin-Hua Li

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作者单位：

State Key Laboratory of High Power Semiconductor Lasers,School of Physics,Changchun University of Science and Technology,Changchun 130022,China

State Key Laboratory of Advanced Materials for Smart Sensing,China General Research Institute for Nonferrous Metals,Beijing 100088,China

Department of Opto-Electronic Information Science,School of Materials Science and Engineering,Harbin Institute of Technology,Harbin 150001,China

基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaDeveloping Project of Science and Technology of Jilin ProvinceNatural Science Foundation of Jilin ProvinceNational Key R&D Program of ChinaNatural Science Foundation of Chongqing China

项目编号：

62074018621740156227503220210509061RQ20210101473JC2021YFB3201901cstc2021jcyjmsxmX1060

出版年：

2024

DOI：

10.1007/s12598-024-02655-3

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDEI

影响因子：0.801

ISSN：1001-0521

年,卷(期)：2024.43(7)

参考文献量4