稀有金属(英文版)2024,Vol.43Issue(7) :3232-3241.DOI:10.1007/s12598-024-02663-3

Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity

Xin Qian Hao-Ran Guo Jia-Xin Lyu Bang-Fu Ding Xing-Yuan San Xiao Zhang Jiang-Long Wang Shu-Fang Wang
稀有金属(英文版)2024,Vol.43Issue(7) :3232-3241.DOI:10.1007/s12598-024-02663-3

Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity

Xin Qian 1Hao-Ran Guo 1Jia-Xin Lyu 1Bang-Fu Ding 2Xing-Yuan San 1Xiao Zhang 3Jiang-Long Wang 1Shu-Fang Wang1
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作者信息

  • 1. Hebei Key Lab of Optic-Electronic Information and Materials,College of Physics Science and Technology,Hebei University,Baoding 071002,China
  • 2. College of Electron and Information Engineering,Hebei University,Baoding 071002,China
  • 3. Research Institute for Frontier Science,Beihang University,Beijing 100191,China
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Abstract

SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of PbTe.However,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric proper-ties.In this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe alloying.First,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal conductivity.Then,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier mobility.Finally,a maximum figure of merit(ZT)of~0.87 at 823 K and an average ZT of~0.51 at 300-823 K have been achieved in Sn0.96Bi0.04Te-5%CdSe.Our results indicate that decreasing the electronic thermal conductivity is an effective means of improving the per-formance of thermoelectric materials with a high carrier concentration.

Key words

Thermoelectric materials/SnTe/Energy band structure/Electronic thermal conductivity/ZT value

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基金项目

National Natural Science Foundation of China(52102234)

National Natural Science Foundation of China(51972094)

Highlevel Talents Research Initiation Project of Hebei University(521000981421)

Hebei Province Introduced Overseas Student Funding Project(C20210313)

energy band structure calculations were performed on the Super Cloud Computing Center of Beijing and Ningxia()

High-Performance Computing Center of Hebei University,and TianHe-1(A)at the National Supercomputer Center in Tianjin()

出版年

2024
稀有金属(英文版)
中国有色金属学会

稀有金属(英文版)

CSTPCDCSCDEI
影响因子:0.801
ISSN:1001-0521
参考文献量54
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