Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

Zhao-Hao Zhang ¹Yan-Na Luo ¹Gao-Bo Xu ¹Jia-Xin Yao ¹Zhen-Hua Wu ¹Hong-Bin Zhao ²Qing-Zhu Zhang ¹Hua-Xiang Yin ¹Jun Luo ¹Wen-Wu Wang ¹Hai-Ling Tu²

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作者信息

1. Integrated Circuit Advanced R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China
2. State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China
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Abstract

In this work,a conventional HfO2 gate dielec-tric layer is replaced with a 3-nm ferroelectric(Fe)HZO layer in the gate stacks of advanced fin field-effect tran-sistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL)and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based FinFETs.These characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO)film,caused by Al doping from the TiAlC capping layer.This mechanism is verified for capacitors with structures similar to the FinFETs.Owing to the enhanced ferroelectricity and N-DIBL phe-nomenon,the drain current(IDs)of the HZO-FinFETs is greater than that of HfO2-FinFETs and obtained at a lower operating voltage.Accordingly,circuits based on HZO-FinFET achieve higher performance than those based on HfO2-FinFET at a low voltage drain(VDD),which indicates the application feasibility of the HZO-FinFETs in the ultra-low power integrated circuits.

Key words

FinFET/Ferroelectric/Hafnium zirconium oxide/Subthreshold swing/Low power

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基金项目

Science and Technology Program of Beijing Municipal Science and Technology Commission(Z201100006820084)

National Natural Science Foundation of China(92064003)

National Natural Science Foundation of China(91964202)

National Natural Science Foundation of China(61904194)

Youth Innovation Promotion Association,Chinese Academy of Sciences(2023130)

Youth Innovation Promotion Association,Chinese Academy of Sciences(Y9YQ01R004)

出版年

2024

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDEI

影响因子：0.801

ISSN：1001-0521

参考文献量2

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