首页|Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

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In this work,a conventional HfO2 gate dielec-tric layer is replaced with a 3-nm ferroelectric(Fe)HZO layer in the gate stacks of advanced fin field-effect tran-sistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-DIBL)and negative differential resistance(NDR),are clearly observed for both p-and n-type HZO-based FinFETs.These characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO)film,caused by Al doping from the TiAlC capping layer.This mechanism is verified for capacitors with structures similar to the FinFETs.Owing to the enhanced ferroelectricity and N-DIBL phe-nomenon,the drain current(IDs)of the HZO-FinFETs is greater than that of HfO2-FinFETs and obtained at a lower operating voltage.Accordingly,circuits based on HZO-FinFET achieve higher performance than those based on HfO2-FinFET at a low voltage drain(VDD),which indicates the application feasibility of the HZO-FinFETs in the ultra-low power integrated circuits.

FinFETFerroelectricHafnium zirconium oxideSubthreshold swingLow power

Zhao-Hao Zhang、Yan-Na Luo、Gao-Bo Xu、Jia-Xin Yao、Zhen-Hua Wu、Hong-Bin Zhao、Qing-Zhu Zhang、Hua-Xiang Yin、Jun Luo、Wen-Wu Wang、Hai-Ling Tu

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Integrated Circuit Advanced R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China

School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China

State Key Laboratory of Advanced Materials for Smart Sensing,General Research Institute for Nonferrous Metals,Beijing 100088,China

Science and Technology Program of Beijing Municipal Science and Technology CommissionNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaYouth Innovation Promotion Association,Chinese Academy of SciencesYouth Innovation Promotion Association,Chinese Academy of Sciences

Z2011000068200849206400391964202619041942023130Y9YQ01R004

2024

10.1007/s12598-024-02674-0

稀有金属(英文版)
中国有色金属学会

稀有金属(英文版)

CSTPCDEI
影响因子：0.801
ISSN：1001-0521
年,卷(期)：2024.43(7)
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