Abstract
Spin logics have emerged as a promising ave-nue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic ani-sotropy.The angle of the lateral interface is set at 45° relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free mag-netic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.
基金项目
Chinese Academy of Sciences(XDA18000000)
Chinese Academy of Sciences(Y201926)
Youth Innovation Promotion Association of CAS(2020118)
Beijing Municipal Natural Science Foundation(4244071)
Research Grants Council—Early Career Scheme(26200520)
维普
万方数据