首页|Contrasting strategies of optimizing carrier concentration in bulk InSe for enhanced thermoelectric performance

Contrasting strategies of optimizing carrier concentration in bulk InSe for enhanced thermoelectric performance

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Indium selenide(InSe),as a wide-bandgap semiconductor,has received extensive attention in the flexible electronics field in recent years due to its excep-tional plasticity and promising thermoelectric performance.However,the low carrier concentration severely limits its thermoelectric performance improvement.In this work,we conducted contrasting strategies that can be employed to increase the carrier concentration of InSe,including bandgap narrowing and heterovalent doping.Specifically,the carrier concentration initially increases as a result of the reduced bandgap upon Te alloying and then slightly decreases due to the weak electronegativity of Te.Whereas Br doping realizes high carrier concentration by pushing the Fermi level into the conduction bands and activating the multiple bands.On the other hand,both Te and Br obviously suppress the thermal conductivity due to the point defect scattering.By contrast,Br doping realizes a higher thermoelectric performance with a maximum ZT of～0.13 at 773 K benefiting from the better optimization of carrier concentration.This work elucidates the strategies for enhancing carrier concentration at anion sites and demonstrates the high efficiency of halogen doping in InSe.Moreover,the carrier concentration of InSe is promising to be further optimized,and future work should focus on employing approaches such as cation doping or second-phase compositing.

ThermoelectricInSeCarrier concentrationBandgapHeterovalent doping

Hao-Nan Shi、Shu-Lin Bai、Yu-Ping Wang、Li-Zhong Su、Qian Cao、Cheng Chang、Li-Dong Zhao

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School of Materials Science and Engineering, Beihang University, Beijing 100191, China

School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China

Huabei Cooling Device Co.Ltd.,Hebei 065400,China

National Science Fund for Distinguished Young ScholarsTencent Xplorer Prize,the National Natural Science Foundation of ChinaTencent Xplorer Prize,the National Natural Science Foundation of ChinaTencent Xplorer Prize,the National Natural Science Foundation of ChinaTencent Xplorer Prize,the National Natural Science Foundation of ChinaTencent Xplorer Prize,the National Natural Science Foundation of ChinaTencent Xplorer Prize,the National Natural Science Foundation of ChinaBeijing Municipal Natural Science Foundation111 Project

51925101523712085225009052002042517720125157100712374023JQ18004B17002

2024

10.1007/s12598-024-02756-z

稀有金属(英文版)
中国有色金属学会

稀有金属(英文版)

CSTPCDEI
影响因子：0.801
ISSN：1001-0521
年,卷(期)：2024.43(9)
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