Contrasting strategies of optimizing carrier concentration in bulk InSe for enhanced thermoelectric performance

Hao-Nan Shi ¹Shu-Lin Bai ¹Yu-Ping Wang ¹Li-Zhong Su ²Qian Cao ³Cheng Chang ¹Li-Dong Zhao¹

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作者信息

1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China
2. School of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China
3. Huabei Cooling Device Co.Ltd.,Hebei 065400,China
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Abstract

Indium selenide(InSe),as a wide-bandgap semiconductor,has received extensive attention in the flexible electronics field in recent years due to its excep-tional plasticity and promising thermoelectric performance.However,the low carrier concentration severely limits its thermoelectric performance improvement.In this work,we conducted contrasting strategies that can be employed to increase the carrier concentration of InSe,including bandgap narrowing and heterovalent doping.Specifically,the carrier concentration initially increases as a result of the reduced bandgap upon Te alloying and then slightly decreases due to the weak electronegativity of Te.Whereas Br doping realizes high carrier concentration by pushing the Fermi level into the conduction bands and activating the multiple bands.On the other hand,both Te and Br obviously suppress the thermal conductivity due to the point defect scattering.By contrast,Br doping realizes a higher thermoelectric performance with a maximum ZT of～0.13 at 773 K benefiting from the better optimization of carrier concentration.This work elucidates the strategies for enhancing carrier concentration at anion sites and demonstrates the high efficiency of halogen doping in InSe.Moreover,the carrier concentration of InSe is promising to be further optimized,and future work should focus on employing approaches such as cation doping or second-phase compositing.

Key words

Thermoelectric/InSe/Carrier concentration/Bandgap/Heterovalent doping

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基金项目

National Science Fund for Distinguished Young Scholars(51925101)

Tencent Xplorer Prize,the National Natural Science Foundation of China(52371208)

Tencent Xplorer Prize,the National Natural Science Foundation of China(52250090)

Tencent Xplorer Prize,the National Natural Science Foundation of China(52002042)

Tencent Xplorer Prize,the National Natural Science Foundation of China(51772012)

Tencent Xplorer Prize,the National Natural Science Foundation of China(51571007)

Tencent Xplorer Prize,the National Natural Science Foundation of China(12374023)

Beijing Municipal Natural Science Foundation(JQ18004)

111 Project(B17002)

出版年

2024

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDEI

影响因子：0.801

ISSN：1001-0521

参考文献量2

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