Pressure-driven metallization with significant changes of structural and photoelectric properties in two-dimensional EuSbTe3

Zhi-Kai Zhu ¹Zhong-Yang Li ²Zhen Qin ³Yi-Ming Wang ⁴Dong Wang ⁴Xiao-Hui Zeng ⁵Fu-Yang Liu ⁴Hong-Liang Dong ⁴Qing-Yang Hu ⁴Ling-Ping Kong ⁴Hao-Zhe Liu ⁴Wen-Ge Yang ⁴Yan-Feng Guo ⁶Shuai Yan ⁷Xuan Fang ⁸Wei He ⁹Gang Liu¹⁰

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作者信息

1. State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures,MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials,and School of Resources,Environment and Materials,Guangxi University,Nanning 530004,China;Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai 201203,China
2. Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai 201203,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
3. Poly Technologies,INC,Beijing 100010,China
4. Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai 201203,China
5. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China
6. School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;ShanghaiTech Laboratory for Topological Physics,ShanghaiTech University,Shanghai 201210,China
7. Shanghai Institute of Applied Physics,Chinese Academy of Sciences,Shanghai 201204,China
8. Sch Sci,State Key Lab High Power Semicond Lasers,Changchun University Science and Technology,Changchun 130022,China
9. State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures,MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials,and School of Resources,Environment and Materials,Guangxi University,Nanning 530004,China
10. Center for High Pressure Science and Technology Advanced Research(HPSTAR),Shanghai 201203,China;Shanghai Key Laboratory of Material Frontiers Research in Extreme Environments(MFree),Shanghai Advanced Research in Physical Sciences(SHARPS),Shanghai 201203,China
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Abstract

Two-dimensional materials are widely consid-ered to be highly promising for the development of pho-todetectors.To improve the performance of these devices,researchers often employ techniques such as defect engi-neering.Herein,pressure is employed as a clean and novel means to manipulate the structural and physical properties of EuSbTe3,an emerging two-dimensional semiconductor.The experimental results demonstrate that the structural phase transformation of EuSbTe3 occurs under pressure,with an increase in infrared reflectivity,a band gap closure,and a metallization at pressures.Com-bined with X-ray diffraction(XRD)and Raman charac-terizations,it is evident that the pressure-driven transition from semiconductor Pmmn phase to metallic Cmcm phase causes the disappearance of the charge density wave.Furthermore,at a mild pressure,approximately 2 GPa,the maximum photocurrent of EuSbTe3 is three times higher than that at ambient condition,suggesting an untapped potential for various practical applications.

Key words

Pressure/Phase transition/Metallization/Photoresponse/Two-dimensional(2D)

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出版年

2024

稀有金属(英文版)

中国有色金属学会

稀有金属(英文版)

CSTPCDCSCDEI

影响因子：0.801

ISSN：1001-0521

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