研究了微弧氧化时间及正向电压对7075铝合金膜层厚度以及生长趋势的影响.以7075铝合金为研究对象,在多物理场仿真软件COMSOL Mutiphysics的帮助下建立铝合金成膜过程中的物理模型,基于有限元的方法求解出了微弧氧化成膜过程中的膜层厚度变化.仿真得到特定时间或者特定电压下的膜层厚度分布图,根据仿真结果绘制了电压-膜层厚度曲线、时间-膜层厚度曲线.由仿真结果可以看出:当正向电压分别为350、400、450 V时,膜层的最大厚度分别为38.804、50.150、61.496 μm;当微弧氧化时间分别为 15、25、35、45 min 时,膜层的最大厚度分别为 25.075、41.792、58.508、75.225 μm,且膜层厚度均呈现由中间向两侧逐渐减小的现象.根据仿真结果可以得出以下结论:随着正向电压的升高,膜层厚度增大;随着氧化时间的增加,膜层的厚度也增加.在膜层厚度分布上,越靠近阴极的位置膜层越厚,远离阴极的位置膜层比较薄,且不同参数下膜层的最厚点与最薄点出现的位置不变.
Effect of Micro-arc Oxidation Time and Forward Voltage on Oxide Film of 7075 Aluminum Alloy Based on COMSOL
The effect of micro-arc oxidation time and forward voltage on the thickness and growth trend of 7075 alu-minum alloy film is studied.Taking 7075 aluminum alloy as the research object,the physical model of the alumi-num alloy film-forming process is established with the help of multi-physical field simulation software COMSOL Mu-tiphysics,and the change of film thickness during micro-arc oxidation film-forming process is solved based on the fi-nite element method.The film thickness distribution diagram under specific time or voltage is simulated,and the voltage-film thickness curve,time-film thickness curve are drawn according to the simulation results.The simula-tion results show that when the forward voltage is 350,450 and 550 V,the maximum thickness of the film layer is 38.804,50.150 and 61.496 μm respectively.When the micro-arc oxidation time is 15,25,35 and 45 min,the maximum thickness of the film is 25.075,41.792,58.508 and 75.225 μm,respectively.The thickness of the film decreases gradually from the middle to both sides.According to the simulation results,the following conclu-sions can be drawn:with the increase of forward voltage oxidation time,the thickness of the film increases.The film thickness is positively correlated with the forward voltage and oxidation time.In terms of film thickness distri-bution,the closer the position is to the cathode,the thicker the film layer is,while the farther away from the cath-ode,the thinner the film layer is,and the thickest point and thinnest point of the film layer appear in the same po-sition under different parameters.
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