Performance optimization of AlGaN-based deep-ultraviolet laser diodes with doped active region
In order to improve the operating performance of the deep-ultraviolet laser diodes(DUV-LD),three structures of n-doped,p-doped and n-p-doped with active region quantum barrier are proposed in this paper.Using Crosslight software,the original structure and the three active region doped structures are simu-lated and studied to compare the P-I characteristic curves,V-I characteristic curves,carrier concentrations,radiation recombination rates and energy band diagrams of the four structures.The simulation results show that the performance of n-p doped structure is better,i.e.,its threshold voltage and threshold current of the n-p doped structure decrease to 4.40 V and 23.8 mA,respectively;radiation recombination rate reaches 1.64cm-3/s;The electro-optical conversion efficiency reaches 42.1％at the same injection current,which increases 3.9％compared with the original structure and greatly improves the operating performance of the DUV-LD.
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