首页|气体吸附对硅锗异质结纳米线电子结构与光学性质的影响

气体吸附对硅锗异质结纳米线电子结构与光学性质的影响

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基于密度泛函理论体系下的广义梯度近似(GGA),采用第一性原理方法探讨了沿[112]晶向的硅锗异质结纳米线作为气体传感器检测CO,CO2和Cl2的能力,着重计算了其吸附气体分子前后的吸附能、能带结构与光学性质。几何结构优化计算表明:不同硅锗组分的[112]晶向的硅锗纳米线对CO,CO2 和Cl2 分子的吸附能的绝对值在0。001 eV至1。36 eV之间,其中Si24Ge36H32 对CO2 气体的吸附能最大,气敏性能最好。能带结构计算表明:吸附CO和CO2分子的[112]晶向硅锗纳米线能带的简并度明显减小,带隙变化较小;而吸附Cl2分子后的价带顶与导带底之间产生了杂质能级使其带隙减小。光学性质计算表明:Si24Ge36H32纳米线吸附CO,CO2和Cl2分子后的光学性质差异明显,主要体现在吸收谱的范围及吸收峰的峰值上,上述研究结果为[112]晶向Si24Ge36H32纳米线可作为气体传感器敏感材料提供了一定的理论依据。
Effects of gas adsorption on electronic structure and optical properties of SiGe heterojunction nanowires
Based on the generalized gradient approximation(GGA)under the density functional theory system,the first-principles approach was used to investigate the ability of SiGe nanowires along the[112]crystallo-graphic orientation as molecular sensors to detect CO,CO2 and Cl2.The adsorption energies,energy band struc-tures and optical properties before and after adsorption of gas molecules were mainly calculated.The calculation of geometric structure optimization shows that the absolute values of adsorption energy of CO,CO2 and Cl2 mole-cules on the[112]crystal orientation of SiGe nanowires with different SiGe compositions are between 0.001 eV and 1.36 eV,and the adsorption energy of Si24 Ge36H32 for CO2 gas is maximum and gas sensing performance is the best.The energy band structure calculation shows that the energy band degeneracy of the[112]crystal-ori-ented SiGe nanowires adsorbed by CO and CO2 molecules is significantly reduced,and the band gap change is small.The impurity energy level is generated between the top of the valence band and the bottom of the conduc-tion band after adsorption of Cl2 molecules,which reduces the band gap.The calculation of optical properties shows that the optical properties of Si24Ge36H32 nanowires after adsorptions of CO,CO2 and Cl2 molecules are ob-viously different,which is mainly reflected in the range of the absorption spectrum and the amplitude of the ab-sorption peak.The above research results provide a theoretical basis for[112]Si24 Ge36 H32 nanowires as a sensi-tive material for gas sensors.

SiGe heterojunction nanowireGas adsorption,Eelectronic structureOptical properties

顾芳、陆春玲、刘清惓、张加宏、朱涵

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南京信息工程大学 物理与光电工程学院,南京 210044

南京信息工程大学江苏省气象探测与信息处理重点实验室,南京 210044

硅锗异质结纳米线 气体吸附 电子结构 光学性质

国家自然科学基金国家自然科学基金

4187503542275143

2024

原子与分子物理学报
四川大学,四川省物理学会,中国物理学会原子与分子物理专业委员会

原子与分子物理学报

北大核心
影响因子:0.296
ISSN:1000-0364
年,卷(期):2024.41(4)
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