首页|二维Ag2S的电子和光电性能的第一性原理研究

二维Ag2S的电子和光电性能的第一性原理研究

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二维Ag2S是一种具有间接宽带隙的半导体材料,由其在平面内和平面外具有独特的力学性质,因此受到了人们的广泛关注。本文基于密度泛函理论进行了第一性原理计算,研究了二维Ag2S的电子、光学性质的变化。二维Ag2S具有较强的方向各异性,通过不同浓度的O取代S替换掺杂,发现随着O浓度的增加,带隙值出现先增大后减小的现象;由于O元素的引入,使二维Ag2S结构对称性降低,引起能带及光吸收、光反射的分布离散化。y方向4。56~5。36 eV处光吸收及光反射峰随掺杂浓度增加逐渐减小,且出现明显的蓝移。
First-principles study of electronic and optical properties of two-dimensional Ag2S
Two-dimensional Ag2S is a semiconductor material with an indirect wide band gap.It has received extensive attention due to its unique mechanical properties in and out of plane.In this paper,the electronic and optical properties of two-dimensional Ag2 S are studied by first-principles calculations based on density func-tional theory.The two-dimensional Ag2 S has strong directional anisotropy.By replacing S with O at different concentrations,it is found that the band gap value increases first and then decreases with the increase of O con-centration.Due to the introduction of O element,the symmetry of the two-dimensional Ag2 S structure is re-duced,which causes the distribution discretization of energy band,light absorption and light reflection.The light absorption and light reflection peaks at 4.56~5.36 eV in the y direction gradually decrease with the increase of doping concentration,and there is an obvious blue shift.

Replace dopingAnisotropyOptical propertiesFirst-principles

相悦、张川川、杨文辉、段海明

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新疆大学物理科学与技术学院,乌鲁木齐 830017

替换掺杂 各向异性 光学性质 第一性原理

新疆维吾尔自治区自然科学基金

2022D01C419

2024

原子与分子物理学报
四川大学,四川省物理学会,中国物理学会原子与分子物理专业委员会

原子与分子物理学报

北大核心
影响因子:0.296
ISSN:1000-0364
年,卷(期):2024.41(6)
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