Review on the Electric Field Calculation of Insulation Structure of High-voltage and High-power IGBT Device
With the development of high voltage direct current transmission technology,high-voltage and high-power insulated gate bipolar transistor(IGBT)devices are widely used in various high-voltage and high-capacity power converters and control equipment.However,during the development of high-voltage and high-power IGBT devices,partial discharge and even breakdown phenomena occur frequently and the insulation design of devices is facing great challenges.In order to achieve good insulation design of devices,it is necessary to obtain the electric field distribution inside the devices.Therefore,accurate calculation of the electric field inside the devices is crucial.In this paper,the development of modeling and calculation methods for internal insulation structures of devices are reviewed comprehensively.Moreover,the application scope of corresponding research,related research progress and shortcomings are introduced from three aspects:electric field calculation of insulation structure of chip,electric field calculation of packaging insulation,and coupling electric field calculation with the chip insulation and package insulation both considered.Finally,the development direction of electric field calculation for insulation structures of devices is prospected.
insulated gate bipolar transistor(IGBT)device insulationpackaging structurechip termination structureelectric field calculation modelboundary value problem
国家科技期刊平台
NSTL
万方数据
维普
