A Novel Bonding Wires Aging Monitoring Method for IGBT Based on the Turn-on Gate Voltage
Reliable operation of insulated gate bipolar transistors(IGBTs)is of high importance for safety and performance of traction converter.As a common failure mode of the IGBT,bonding wires aging monitoring is highly helpful.This paper proposes a novel aging monitoring method using the turn-on gate voltage(ugem),in which the effects of temperature and load current on the monitoring can be avoided.First,based on the equivalent circuit model of the IGBT,the behavior of ugem with bonding wire aging is thoroughly characterized.Then,the double-pulse experiments are carried out to verify the theoretical analysis,and the effects of temperature and load current are analyzed in detail.Considering that the ugem local features may be affected by temperature and load current,a bonding wire aging monitoring method using the entire waveform of the ugem is accordingly proposed,in which the supervised linear discriminant analysis(LDA)is used to reduce the dimensionality of data,and the support vector machine(SVM)is performed to detect the bond wire fracture.Finally,the effectiveness of the proposed method is verified by conducting experimental tests.
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维普
