质子注入缓冲层结构的高压FS-IGBT动态坚固性研究
Investigation on Dynamic Robustness of High Voltage FS-IGBT With Multiple Proton Injection Buffers Layer
魏晓光 1聂瑞芬 1金锐 1王耀华 1李立 1田宝华 1王松华1
作者信息
- 1. 北京智慧能源研究院,北京市 昌平区 102200
- 折叠
摘要
具有多重质子注入(multiple proton injection,MPI)缓冲层结构的FS-IGBT,相比传统磷注入缓冲层结构的同类型器件,其动态坚固性发生了改变.通过对 MPI 缓冲层结构的FS-IGBT的短路特性研究发现,MPI缓冲层的峰数越多,抗短路热失效能力越强,但是峰数太多,可能会引起IGBT在短路时的栅极电压振荡,造成器件失效.这与IGBT在短路大电流下的 Kirk 效应有关.Kirk 效应造成短路时 IGBT栅电极下电场降低,电子运动速率减小,进而栅电极下累积的电子造成栅极输入电容的改变,引起栅电压振荡.此外,实验发现,MPI 缓冲层峰的氢相关施主(hydrogen-related donors,HDs)浓度不仅与注入剂量和激活温度有关,还与注入次数有关,具体表现为注入次数多,辐射损伤多,HDs浓度越高.文中研究不同 MPI 缓冲层结构的 IGBT 关断坚固性.
Abstract
The dynamic robustness of FS-IGBT with multiple proton injection buffers(MPI)is changed compared with the same type of devices which has traditional phosphorus injection buffers.By studying the short-circuit characteristics of FS-IGBT with MPI buffer layer,it is found that the higher the number of peaks in MPI buffer layer,the stronger the resistance to short-circuit thermal failure.However,too many peaks may cause the gate voltage oscillation of IGBT during short-circuit,resulting in device failure.This is related to Kirk effect of IGBT under large short circuit current.Kirk effect results in the reduction of the electric field under the IGBT gate electrode and the decrease of the electron velocity,and then the accumulated electrons under the gate electrode cause the change of the gate input capacitance,leading to gate voltage oscillation.In addition,it is found that the hydrogen-related donors(HDs)concentration of MPI buffer layer peak is not only related to the injection dose and activation temperature,but also related to the injection times.The more the injection times,the higher the concentration of HDs caused by radiation damage.The turn-off robustness of IGBTs with different MPI buffer structures is also studied.
关键词
多重质子注入/缓冲层/短路坚固性/振荡/Kirk效应Key words
multiple proton injection/buffer layer/short-circuit robustness/oscillation/Kirk effect引用本文复制引用
基金项目
国家电网有限公司科技项目(5500-202158491A-0-5-ZN)
出版年
2024
国家科技期刊平台
NSTL
万方数据