首页|一种新型可调驱动电压的SiC/Si混合开关驱动电路

一种新型可调驱动电压的SiC/Si混合开关驱动电路

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为提高碳化硅金属氧化物半导体场效应晶体管(silicon carbide metal oxide semiconductor filed effect transistor,SiC-MOSFET)与硅基绝缘栅极双极晶体管(silicon insulated gate bipolar transistor,Si-IGBT)并联混合开关(SiC/Si hybrid switch,SiC/Si HyS)的可靠性与适用性,该文提出一种可变驱动电压的SiC/Si HyS栅极驱动电路结构,采用一路脉冲宽度调制(pulse width modulation,PWM)控制信号和一个驱动芯片产生不同电压幅值的栅极控制信号,分别控制SiC/Si HyS中的SiC-MOSFET和Si-IGBT.相比于传统采用 2 个独立驱动电路的SiC/Si HyS驱动结构,该驱动电路大幅度降低SiC/Si HyS栅极驱动电路的复杂度,降低SiC-MOSFET关断过程中Si-IGBT误导通的可能性,提升混合开关的工作可靠性.该文首先分析所设计驱动电路工作原理,给出驱动电压调节方法;其次,建立耦合电容端电压纹波和系统启动时电容端电压暂态数学模型,通过仿真和实验验证模型准确性;搭建 2 kW的SiC/Si混合开关Buck电路,验证该文所提混合开关驱动电路可行性,从SiC/Si HyS功率器件关断损耗、驱动电路功率损耗、成本以及体积4个方面分析所提驱动结构的优势.
Novel SiC/Si Hybrid Switch Drive Circuit With Adjustable Driving Voltage
To improve the applicability and reliability of the hybrid switch realized by silicon carbide metal oxide semiconductor filed effect transistor(SiC-MOSFET)and silicon insulated gate bipolar transistor(Si-IGBT)in parallel connection(SiC/Si HyS),this paper proposes a SiC/Si hybrid switch drive circuit with variable drive voltage for the first time.It utilizes one PWM control signal and one driver chip to generate gate signals with different voltage levels to control SiC-MOSFET and Si-IGBT,respectively.Compared with the traditional SiC/Si HyS gate driver circuit with dual independent drive branch,the proposed drive circuit greatly reduces the complexity of SiC/Si HyS gate drive circuit design,while it reduces the possibility of Si-IGBT misdirection during SiC-MOSFET turning off,improving the reliability of hybrid switching.The working principle of the designed driving circuit is analyzed in detail,and the gate voltage adjustment is given.The mathematical model of the voltage ripple and the transient process of the coupling capacitor are established during system startups,and the accuracy is verified by both simulation and experiment.A 2 kW SiC/Si hybrid switch Buck converter is built based on the proposed drive circuit to verify the reliability of the system.The advantages of the proposed drive circuit are analyzed by comparison with the existing methods in terms of power losses of the SiC/Si power switches,power loss of the drive circuit,system cost and volume.

wide bandgap semiconductor devicesilicon carbide metal oxide semiconductor filed effect transistor(SiC-MOSFET)silicon insulated gate bipolar transistor(Si-IGBT)hybrid switchgate driver circuitcoupling capacitor

付永升、任海鹏

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西安工业大学电子信息工程学院,陕西省 西安市 710021

西安工业大学机械工程学院,陕西省 西安市 710021

宽禁带半导体器件 碳化硅金属氧化物半导体场效应晶体管 硅基绝缘栅极双极晶体管 混合开关 门极驱动电路 耦合电容

陕西省科技厅自然科学基础研究项目西安工业大学优秀博士论文培育基金

2022JQ-424YB202203

2024

10.13334/j.0258-8013.pcsee.230225

中国电机工程学报
中国电机工程学会

中国电机工程学报

CSTPCD北大核心
影响因子：2.712
ISSN：0258-8013
年,卷(期)：2024.44(7)
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