栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究
Effect of Gate Oxide Degradation on SiC MOSFET Gate Turn-on Oscillation
李豪 1成芮俊杰 1向大为 2田鑫1
作者信息
- 1. 上海电力大学电气工程学院,上海市 杨浦区 200090
- 2. 同济大学电子与信息工程学院,上海市 嘉定区 201804
- 折叠
摘要
栅氧老化问题已成为制约碳化硅(SiC)金属半导体氧化物场效应管(metal oxide semiconductor field effect transistor,MOSFET)可靠性的关键因素,该文尝试利用SiC MOSFET 高速开关在变换器中引起的高频开关振荡获取栅氧状态信息,重点研究栅氧老化对开通瞬态栅极高频振荡特性的影响.首先,分析SiC MOSFET栅氧老化机理及其对器件开通时间的影响.然后,建立开通瞬态栅极回路分阶段高频等效电路模型,揭示SiC MOSFET栅极开通振荡电流的形成机理和影响因素.最后,通过 33 V高压栅偏加速老化实验进行验证.研究结果表明,随着栅氧老化程度的加深,SiC MOSFET阈值电压会逐渐增加而开通速度变慢,导致栅极开通振荡电流显著减小(约 28%).该文的工作有望为SiC MOSFET栅氧老化在线监测提供一种新的思路.
Abstract
The gate oxide degradation has become a crucial factor restricting the reliability of SiC metal oxide semiconductor field effect transistor(MOSFET).This paper attempts to obtain gate oxide state information by using the high-frequency(HF)switching oscillations caused by SiC MOSFETs high-speed switching in converters.The effect of gate oxide degradation on SiC MOSFETs gate turn-on oscillation is explored.First,the aging mechanism of SiC MOSFETs gate oxide and its influence on device turn-on time are analyzed.Then,a multi-stages HF equivalent model of gate loop during turn-on transient is established to reveal the formation mechanism and dominating factors of gate turn-on oscillation.Finally,a 33 V high voltage gate bias accelerated aging experiment is conducted for verification.The research results show that the threshold voltage of SiC MOSFETs increases and the turn-on speed becomes slower with the development of gate oxide aging.Consequently,a significant reduction of about 28%is observed in the gate turn-on oscillation current.The presented work is expected to provide a new idea for online monitoring of SiC MOSFETs gate oxide aging.
关键词
碳化硅金属半导体氧化物场效应管(SiC/MOSFET)/栅氧老化/栅极振荡/在线状态监测Key words
SiC metal oxide semiconductor field effect transistor(MOSFET)/gate oxide degradation/gate oscillation/online condition monitoring引用本文复制引用
基金项目
国家自然科学基金项目(52177190)
国家自然科学基金项目(51907116)
上海市自然科学基金项目(22ZR1425400)
出版年
2024
国家科技期刊平台
NSTL
万方数据