首页|栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究

栅氧老化下SiC MOSFET开通瞬态栅极振荡特性研究

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栅氧老化问题已成为制约碳化硅(SiC)金属半导体氧化物场效应管(metal oxide semiconductor field effect transistor,MOSFET)可靠性的关键因素,该文尝试利用SiC MOSFET 高速开关在变换器中引起的高频开关振荡获取栅氧状态信息,重点研究栅氧老化对开通瞬态栅极高频振荡特性的影响.首先,分析SiC MOSFET栅氧老化机理及其对器件开通时间的影响.然后,建立开通瞬态栅极回路分阶段高频等效电路模型,揭示SiC MOSFET栅极开通振荡电流的形成机理和影响因素.最后,通过 33 V高压栅偏加速老化实验进行验证.研究结果表明,随着栅氧老化程度的加深,SiC MOSFET阈值电压会逐渐增加而开通速度变慢,导致栅极开通振荡电流显著减小(约 28%).该文的工作有望为SiC MOSFET栅氧老化在线监测提供一种新的思路.
Effect of Gate Oxide Degradation on SiC MOSFET Gate Turn-on Oscillation
The gate oxide degradation has become a crucial factor restricting the reliability of SiC metal oxide semiconductor field effect transistor(MOSFET).This paper attempts to obtain gate oxide state information by using the high-frequency(HF)switching oscillations caused by SiC MOSFETs high-speed switching in converters.The effect of gate oxide degradation on SiC MOSFETs gate turn-on oscillation is explored.First,the aging mechanism of SiC MOSFETs gate oxide and its influence on device turn-on time are analyzed.Then,a multi-stages HF equivalent model of gate loop during turn-on transient is established to reveal the formation mechanism and dominating factors of gate turn-on oscillation.Finally,a 33 V high voltage gate bias accelerated aging experiment is conducted for verification.The research results show that the threshold voltage of SiC MOSFETs increases and the turn-on speed becomes slower with the development of gate oxide aging.Consequently,a significant reduction of about 28%is observed in the gate turn-on oscillation current.The presented work is expected to provide a new idea for online monitoring of SiC MOSFETs gate oxide aging.

SiC metal oxide semiconductor field effect transistor(MOSFET)gate oxide degradationgate oscillationonline condition monitoring

李豪、成芮俊杰、向大为、田鑫

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上海电力大学电气工程学院,上海市 杨浦区 200090

同济大学电子与信息工程学院,上海市 嘉定区 201804

碳化硅金属半导体氧化物场效应管(SiC MOSFET) 栅氧老化 栅极振荡 在线状态监测

国家自然科学基金项目国家自然科学基金项目上海市自然科学基金项目

521771905190711622ZR1425400

2024

10.13334/j.0258-8013.pcsee.223045

中国电机工程学报
中国电机工程学会

中国电机工程学报

CSTPCD北大核心
影响因子：2.712
ISSN：0258-8013
年,卷(期)：2024.44(9)
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