国产6.5 kV/400 A SiC MOSFET模块研制及电气特性研究

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国家科技期刊平台
NETL
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中文摘要：为满足当前新型电力系统中电能变换装备对器件高压、大容量、工作频率高、开关损耗低的需求,文中自主研制一款国内最高功率等级的 6.5 kV/400 A 碳化硅金属-氧化物-半导体场效应晶体管(metal-oxide-semiconductor field effect transistor,MOSFET)模块,并对其电气特性开展研究.首先,对模块的电路与封装结构进行设计,通过热仿真和阻抗测量手段,对所研制模块的热特性以及回路寄生参数进行分析;其次,对所研制的模块开展常温(25℃)及高温(150℃)下的静态、动态特性测量.测量结果表明,在常温、高温条件下,模块的阻断漏电流与栅源极漏电流微小,且开关损耗维持一致,具备较好的耐高温特性.同时,相较于同电压电流规格的硅绝缘栅双极型晶体管器件,模块开关损耗可降低72%以上.最后,搭建碳化硅器件连续运行工况实验平台,模拟器件在换流装备中的实际运行工况,对模块进行半桥正弦脉宽调制逆变连续运行实验.连续运行实验结果表明,该模块在电压 3 600 V、器件电流峰值 280 A 条件下连续运行1h 无异常,初步验证模块具备工程应用能力.研究可为高压碳化硅MOSFET的研制及工程应用提供一定支撑.

外文标题：Fabrication and Electrical Characteristics Research of Domestic 6.5 kV/400 A SiC MOSFET Module

外文摘要：In order to meet the requirements of high voltage,large capacity,high operating frequency and low switching losses of the power conversion equipment in the new power system,a 6.5 kV/400 A SiC MOSFET module with the highest power level in China is independently developed,and research is conducted on its electrical characteristics.First,the circuit and packaging structure of the module are designed.The thermal characteristics and loop parasitic parameters of the developed module are analyzed by means of thermal simulation and impedance measurement.Subsequently,the static and dynamic characteristics of the developed module are measured at room temperature(25℃)and high temperature(150℃).The measuring results show that under room temperature and high temperature conditions,the blocking leakage current and the gate source leakage current of the module are small,and the switching losses are consistent,which indicates that the module has good high-temperature resistance characteristics.At the same time,compared with Si insulated gate bipolar transistor(IGBT)devices with the same voltage and current specifications,the switching losses of the module can be reduced by more than 72%.Finally,an experimental platform for continuous operation of the SiC module is built to simulate the actual operation of the module in the converter equipment.On this basis,the continuous operation experiment of a half-bridge sinusoidal pulse width modulation(SPWM)inverter is conducted on the module.The experimental results of continuous operation show that the module runs continuously for one hour under the condition of voltage 3600V and device current peak 280A without any abnormalities.It is preliminarily verified that the module has the ability of engineering application.The research can provide support for the development and engineering application of high-voltage SiC MOSFETs.

外文关键词：

SiC metal-oxide-semiconductor field effect transistor(MOSFET)modulepackage structure designstatic characteristicdynamic characteristiccontinuous operation experiment

作者：

魏晓光、吴智慰、唐新灵、杜玉杰、杨霏、李学宝、赵志斌、吴沛飞、徐云飞、齐磊、李士颜、单云海

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作者单位：

北京智慧能源研究院,北京市昌平区 102209

新能源电力系统全国重点实验室(华北电力大学),北京市昌平区 102206

先进输电技术全国重点实验室(国网智能电网研究院有限公司),北京市昌平区 102209

宽禁带半导体电力电子器件全国重点实验室(南京电子器件研究所),江苏省南京市 210016

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关键词：

碳化硅金属-氧化物-半导体场效应晶体管模块封装结构设计静态特性动态特性连续运行实验

基金：

国家电网科技项目

项目编号：

5500-202299491A-2-0-KJ

出版年：

2024

DOI：

10.13334/j.0258-8013.pcsee.230626

中国电机工程学报

中国电机工程学会

中国电机工程学报

CSTPCD北大核心

影响因子：2.712

ISSN：0258-8013

年,卷(期)：2024.44(10)

参考文献量42