碳化硅三电平有源中点箝位(silicon carbide three level active neutral point clamped，SiC 3L-ANPC)变换器在中压大容量应用中具有突出优势，但与传统两电平变换器相比，其杂散参数相对较多，高速开关瞬态中较高的du/dt、di/dt与多杂散参数的综合作用，易引发严重的器件电压、电流过冲和振荡，增加开关损耗，制约器件功率处理能力。准确定量评估开关瞬态行为，对变换器的精细设计、运行调控、安全保护、EMI 抑制、寿命预测等都至关重要。为此，该文在厘清SiC 3L-ANPC变换器瞬态换流机理的基础上，提出一种SiC 3L-ANPC电路开关瞬态解析建模方法，所建模型仅需计算数个特定时刻的电路状态就能准确预测 SiC 3L-ANPC 变换器的开关瞬态行为，大大减小了计算时间与计算量，且每个特定时刻均具有明确的物理意义，具有普适性。实验结果证明了提出的建模方法的有效性，瞬态过冲最大计算误差小于6%，且计算速度比电路建模仿真方法提高上百倍。基于该文研究成果，为SiC 3L-ANPC逆变器的过电压抑制提供了电路参数设计指导意见。
Research on Switching Transient Mechanism and Analytical Modeling Method of SiC 3L-ANPC Circuit
The silicon carbide three level active neutral point clamped(SiC 3L-ANPC)converter exhibits outstanding advantages in medium voltage and high capacity applications.However,compared with traditional two-level converters,there are relatively more stray parameters in 3L-ANPC circuit.Under the combined effect of high du/dt,di/dt and multiple stray parameters,it is prone to severe device voltage and current overshoot and oscillation,which increase switch losses and restrict its power handling capability.Accurate quantification of the switching transient is of utmost importance for the finely design,proactive operation regulation,safety protection,EMI suppression,and lifetime prediction of the converter.Based on the analysis of the commutation mechanism of SiC 3L-ANPC converter,this paper proposes an analytical modeling method for 3L-ANPC circuit switching transients.The proposed modeling method can accurately predict the switching transient behavior of SiC 3L ANPC converters by only calculating the circuit states at a few specific moments.Each moment has a clear physical meaning and good universality.Experimental results validate the effectiveness of the proposed modeling method,with a maximum calculation error of less than 6%for transient overshoot and a computation speed improvement of over a hundred times compared to commonly used modeling methods.Finally,guidance is provided for the design of circuit parameters in SiC 3L-ANPC inverters to suppress overvoltage based on the achievements of this research.
SiC MOSFETswitching transientthree level active neutral point clamped(3L-ANPC)analytical modelparasitic parameters
万方数据
维普
