首页|The compatibly large nonlinear optical effect and high laser-induced damage threshold in a thiophosphate CsInP2S7 constructed with[P2S7]4-and[InS6]9-

The compatibly large nonlinear optical effect and high laser-induced damage threshold in a thiophosphate CsInP2S7 constructed with[P2S7]4-and[InS6]9-

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It is challenging to cooperatively improve the nonlinear optical(NLO)efficiency and the laser-induced damage threshold(LIDT).This work reports a novel IR NLO materials CslnP2S7(CIPS)designed by combination the strategies of alkali metals substitution and microscopic NLO units PS4 introduction based on AgGaS2.CIPS was composed of strongly distorted[InS6]9-octahedra and[P2S7]4-dimers con-structed by corner-sharing[PS4]3-,which increase the NLO efficiency and decrease thermal expansion anisotropy simultaneously.Compared with AgGaS2,CIPS exhibited strong phase matchable NLO response ca.1.1 × AGS@2.1 μm,high LIDT ca.20.8×AgGaS2,and IR transparency up to 15.3 μm.Structural analysis and theoretical investigation confirmed that large SHG effect and ultrahigh LIDT of CIPS originated from the synergistic contribution of[InS6]9-octahedra and[P2S7]4-dimers.These results indicate that CIPS is a promising NLO candidate in the mid-IR region,and this study provides a new approach for developing potential NLO-LIDT compatible materials.

Infrared nonlinear optics materialsA novel thiophosphateStructure designStructure-activity relationshipHigh laser-induced damage threshold

Mengjia Luo、Xiaohui Li、Xingxing Jiang、Zheshuai Lin、Zhengyang Zhou

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Nanchang Key Laboratory of Photoelectric Conversion and Energy Storage Materials,Nanchang Institute of Technology,Nanchang 330099,China

Institute of Experimental Physics,Free University Berlin,Berlin D-14195,Germany

Functional Crystals Lab,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190,China

Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China

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国家自然科学基金

22105218

2024

中国化学快报(英文版)
中国化学会

中国化学快报(英文版)

CSTPCD
影响因子:0.771
ISSN:1001-8417
年,卷(期):2024.35(1)
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