Abstract
The compatibility of the gate dielectrics with semiconductors is vital for constructing efficient conduct-ing channel for high charge transport.However,it is still a highly challenging mission to clearly clarify the relationship between the dielectric layers and the chemical structure of semiconductors,especially vacuum-deposited small molecules.Here,interfacial molecular screening of polyimide(Kapton)dielectric in organic field-effect transistors(OFETs)is comprehensively studied.It is found that the semiconduct-ing small molecules with alkyl side chains prefer to form a high-quality charge transport layer on poly-imide(PI)dielectrics compared with the molecules without alkyl side chains.On this basis,the fabricated transistors could reach the mobility of 1.2 cm2 V-1 s-1 the molecule with alkyl side chains on bare PI dielectric.What is more,the compatible semiconductor and dielectric would further produce a low acti-vation energy(EA)of 3.01 meV towards efficient charge transport even at low temperature(e.g.,100 K,0.9 cm2 V-1 s-1).Our research provides a guiding scheme for the construction of high-performance thin-film field-effect transistors based on PI dielectric layer at room and low temperatures.
基金项目
国家重点研发计划(2021YFA0717900)
国家重点研发计划(2022YFE0124200)
国家自然科学基金(62004138)
国家自然科学基金(52273190)
国家自然科学基金(61905121)
国家自然科学基金(U2241221)
Haihe Laboratory of Sustainable Chemical Transformations()
维普
万方数据