中国化学快报(英文版)2024,Vol.35Issue(4) :431-435.DOI:10.1016/j.cclet.2023.109051

Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

Min Chen Boyu Peng Xuyun Guo Ye Zhu Hanying Li
中国化学快报(英文版)2024,Vol.35Issue(4) :431-435.DOI:10.1016/j.cclet.2023.109051

Polyethylene interfacial dielectric layer for organic semiconductor single crystal based field-effect transistors

Min Chen 1Boyu Peng 1Xuyun Guo 2Ye Zhu 2Hanying Li1
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作者信息

  • 1. Department of Polymer Science and Engineering,MOE Key Laboratory of Macromolecular Synthesis and Functionalization,International Research Center for X Polymers,Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering,Zhejiang University,Hangzhou 310027,China
  • 2. Department of Applied Physics,Research Institute for Smart Energy,The Hong Kong Polytechnic University,Hong Kong 999077,China
  • 折叠

Abstract

Organic semiconductor single crystals(OSSCs)have shown their promising potential in high-performance organic field-effect transistors(OFETs).The interfacial dielectric layers are critical in these OFETs as they not only govern the key semiconductor/dielectric interface quality but also determine the growth of OSSCs by their wetting properties.However,reported interfacial dielectric layers either need rig-orous preparation processes,rely on certain surface chemistry reactions,or exhibit poor solvent re-sistance,which limits their applications in low-cost,large-area,monolithic fabrication of OSSC-based OFETs.In this work,polyethylene(PE)thin films and lamellar single crystals are utilized as the inter-facial dielectric layers,providing solvent resistive but wettable surfaces that facilitate the crystallization of 6,13-bis(tri-isopropylsilylethynyl)pentacene(TIPS-PEN)and 6,13-bis(triisopropylsilylethynyl)-5,7,12,14-tetraazapentacene(TIPS-TAP).As evidenced by the presence of ambipolar behavior in TIPS-PEN single crystals and the high electron mobility(2.3±0.34 cm2 V-1 s-1)in TIPS-TAP single crystals,a general im-provement on electron transport with PE interfacial dielectric layers is revealed,which likely associates with the chemically inertness of the saturated C-H bonds.With the advantages in both processing and device operation,the PE interfacial dielectric layer potentially offers a monolithic way for the enhance-ment of electron transport in solution-processed OSSC-based OFETs.

Key words

Polyethylene/Interfacial dielectric layer/Organic semiconductor/Single crystal/Organic field-effect transistors

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基金项目

国家重点研发计划(2019YFE0116700)

国家重点研发计划(2019YFA0705900)

科技部项目()

国家自然科学基金(51873182)

国家自然科学基金(52103231)

Zhejiang Province science and Technology Plan(2021C04012)

浙江省科技厅项目()

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering(2021SZ-FR003)

中央高校基本科研业务费专项(226-2023-00113)

出版年

2024
中国化学快报(英文版)
中国化学会

中国化学快报(英文版)

CSTPCD
影响因子:0.771
ISSN:1001-8417
参考文献量38
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