While heteroatom doping serves as a powerful strategy for devising novel polycyclic aromatic hydro-carbons(PAHs),the further fine-tuning of optoelectronic properties via the precisely altering of doping patterns remains a challenge.Herein,by changing the doping positions of heteroatoms in a diindenopy-rene skeleton,we report two isomeric boron,sulfur-embedded PAHs,named Anti-B2S2 and Syn-B2S2,as electron transporting semiconductors.Detailed structure-property relationship studies revealed that the varied heteroatom positions not only change their physicochemical properties,but also largely affect their solid-state packing modes and Lewis base-triggered photophysical responses.With their low-lying fron-tier molecular orbital levels,n-type characteristics with electron mobilities up to 1.5 × 10-3 cm2 V-1 s-1 were achieved in solution-processed organic field-effect transistors.Our work revealed the critical role of controlling heteroatom doping patterns for designing advanced PAHs.
Key Laboratory of Chemo/Biosensing and Chemometrics,College of Chemistry and Chemical Engineering,Hunan University,Changsha 410082,China
Shenzhen Research Institute of Hunan University,Shenzhen 518000,China
Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education and Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and Electronics,Hunan University,Changsha 410082,China
国家自然科学基金国家自然科学基金国家自然科学基金国家自然科学基金深圳市科技计划Science and Technology Inno-vation Program of Hunan Province国家重点研发计划
NETL
NSTL
万方数据
