首页|Advanced development of grain boundaries in TMDs from fundamentals to hydrogen evolution application

Advanced development of grain boundaries in TMDs from fundamentals to hydrogen evolution application

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Grain boundary(GB),as a kind of lattice defect,widely exists in two-dimensional transition metal dichalcogenides(2D TMDs),which has complex and diverse influences on the physical/chemical prop-erties of 2D TMDs.GBs are universally considered to be a double-edged sword,although some electrical and mechanical properties of 2D TMDs would be adversely affected leading to the reduced overall qual-ity,certain structure-oriented applications could be realized based on its unique properties.In this review,we first detailed the atomic structure characteristics of GBs and the corresponding techniques,then we systematically summarized the methods of introducing GBs into 2D TMDs.Next,we expounded unique electrical,mechanical,and chemical properties of the GBs in 2D TMDs and clarified its internal relation-ship with the atomic structure.Moreover,the application of GB structure in hydrogen evolution reaction(HER)is also discussed.In the end,we make a conclusion and put forward outlooks,hoping to further promote the basic research of GB and boost the wide application of 2D TMDs.

Grain boundaryTransition metal dichalcogenidesTwo-dimensional materialsHydrogen evolution reactionDislocationMolybdenum disulfide

Ziyang Yin、Lingbin Xie、Weinan Yin、Ting Zhi、Kang Chen、Junan Pan、Yingbo Zhang、Jingwen Li、Longlu Wang

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College of Electronic and Optical Engineering & College of Flexible Electronics(Future Technology),Nanjing University of Posts & Telecommunications(NJUPT),Nanjing 210023,China

Institute of Advanced Materials(IAM)& Institute of Flexible Electronics(Future Technology),Nanjing University of Posts & Telecommunications(NJUPT),Nanjing 210023,China

国家自然科学基金江苏省自然科学基金Science Foundation of Nanjing University of Posts and TelecommunicationsNational College Student Innovation and Entrepreneurship Training Program

51902101BK20201381NY219144202210293171K

2024

10.1016/j.cclet.2023.108628

中国化学快报(英文版)
中国化学会

中国化学快报(英文版)

CSTPCD
影响因子：0.771
ISSN：1001-8417
年,卷(期)：2024.35(5)
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