首页|Potassium doping for grain boundary passivation and defect suppression enables highly-efficient kesterite solar cells
Potassium doping for grain boundary passivation and defect suppression enables highly-efficient kesterite solar cells
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The complicated and diverse deep defects,voids,and grain boundary in the CZTSSe absorber are the main reasons for carrier recombination and efficiency degradation.The further improvement of the open-circuit voltage and fill factor so as to increase the efficiency of CZTSSe device is urgent.In this work,we obtained K-doped CZTSSe absorber by a simple solution method.The medium-sized K atoms,which combine the advantages of light and heavy alkali metals,are able to enter the grain interior as well as segregate at grain boundary.The K-Se liquid phase can improve the absorber crystallinity.We find that the accumula-tion of the wide bandgap compound K2Sn2S5 at grain boundary can increase the contact potential differ-ence of grain boundary,form more effective hole barriers,and enhance the charge separation ability.At the same time,K doping passivates the interface as well as bulk defects and suppresses the non-radiative recombination.The improved crystallinity,enhanced charge transport capability and reduced defect den-sity due to K doping result in a significant enhancement of the carrier lifetime,leading to 13.04％device efficiency.This study provides a new idea for simultaneous realization of grain boundary passivation and defect suppression in inorganic kesterite solar cells.
College of Materials and Energy Engineering,Guizhou Institute of Technology,Guiyang 550003,China
Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China
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