首页|共价有机框架薄膜的界面生长策略及其在忆阻器中的研究进展

共价有机框架薄膜的界面生长策略及其在忆阻器中的研究进展

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随着大数据和物联网时代数字通信技术的飞速发展,忆阻器在高密度数据存储技术和神经形态计算等应用中扮演着越来越重要的角色.得益于共价有机框架(COF)材料优异的可设计性及独特的光电特性,同时,伴随着液体界面辅助的制备策略不断发展与完善,COF材料在存储器件中的应用得到了极大推广.为了开发更高性能的基于COF材料的存储器件,需要全面地了解从材料设计、制备到器件应用的不断发展.因此,本综述系统地总结了COF薄膜的制备策略及其在忆阻器中应用的进展.最后,我们对基于COF存储器件的当前挑战及未来发展进行了总结与展望.
Interfacial growth strategy of covalent organic framework films and its research progress in memristors
With the rapid development of digital communication technology in the era of big data and internet of things,memristors play an increasingly important role in high-density data storage technology and neuromorphic computing.Benefiting from the excellent designability and unique photoelectric properties of covalent organic framework(COF)materials,and with the continuous development and improvement of liquid interface-assisted preparation strategies,the application of COF materials in memristors has been greatly promoted.It is necessary to pay attention to the continuous development from material design,preparation to device application for developing higher performance memory devices based on COF materials.Therefore,this review summarizes the preparation strategies of COF films and their applications in memristors.Finally,we summarize the current challenges and future development of COF-based memristor.

covalent organic framework filmliquid interface assisted methodmemristor

刘磊、邹相龙、吴凌莉、雷圣宾

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天津大学理学院化学系,有机集成电路教育部重点实验室,天津市分子光电科学重点实验室,天津 300072

西北民族大学医学部,兰州 730000

兰州交通大学化学与化工学院,兰州 730070

共价有机框架薄膜 液体界面辅助法 忆阻器

国家自然科学基金

52073208

2024

中国科学(化学)
中国科学院

中国科学(化学)

CSTPCD北大核心
影响因子:0.685
ISSN:1674-7224
年,卷(期):2024.54(4)
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