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3D resistive RAM cell design for high-density storage class memory-a review

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In this article,we comprehensively review recent progress in the ReRAM cell technology for 3D integration focusing on a material/device level.First we briefly mention pioneering work on high-density crossbar ReRAM arrays which paved the way to 3D integration.We discuss the two main proposed 3D integration schemes-3D horizontally stacked ReRAM vs 3D Vertical ReRAM and their respective advantages and disadvantages.We follow with the detailed memory cell design on important work in both areas,utilizing either filamentary or interface-limited switching mechanisms.We also discuss our own contributions on HfO2-based filamentary 3D Vertical ReRAM as well as TaOx/TiO2 bilayer-based self:rectifying 3D Vertical ReRAM.Finally,we summarize the present status and provide an outlook for the nearterm future.

RRAMReRAMresistive switchingcrossbarcross-pointstorage class memory3D integrationatomic layer depositionselector

Boris HUDEC、Chung-Wei HSU、I-Ting WANG、Wei-Li LAI、Che-Chia CHANG、Taifang WANG、Karol FR(O)HLICH

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Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu

Institute of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovak Republic

Ministry of Science and Technology of TaiwanWinbond Electronics Corp.and VEGA ProjectBoris HUDEC acknowledges the financial support of the International Visegrad FundTuo-Hung HOU acknowledges support in part by NCTU-UCB I-RiCE Program

102-2221-E-009-188-MY32/0138/2014MOST 105-2911-I-009-301

2016

10.1007/s11432-016-5566-0

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSCDSCIEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2016.59(6)
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