首页|Salt-assisted chemical vapor deposition of two-dimensional materials

Salt-assisted chemical vapor deposition of two-dimensional materials

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Two-dimensional (2D) materials with atomic thickness are promising candidates for the applications in future semiconductor devices,owing to their fascinating physical properties and superlative optoelectronic performance.Chemical vapor deposition (CVD) is considered to be an efficient method for large-scale preparation of 2D materials toward practical applications.However,the high melting points of metal precursors and the thermodynamics instabilities of metastable phases limit the direct CVD synthesis of plenty of 2D materials.The salt has recently been introduced into the CVD process,which proved to be effective to address these issues.In this review,we highlighted the latest progress in the salt-assisted CVD growth of 2D materials,including layered and non-layered crystals.Firstly,strategies of adding salts are summarized.Then,the salt-assisted growth of various layered materials is presented,emphasizing on the transition metal chalcogenides of stable and metastable phases.Furthermore,strategies to grow ultrathin non-layered materials are discussed.We provide viewpoints into the techniques of using salt,the effects of salt,and the growth mechanisms of 2D crystals.Finally,we offer the challenges to be overcome and further research directions of this emerging salt-assisted CVD technique.

salt-assistedchemical vapor deposition2D materialstransition metal dichalcogenidesnon-layered materials

Wei Han、Kailang Liu、Sanjun Yang、Fakun Wang、Jianwei Su、Bao Jin、Huiqiao Li、Tianyou Zhai

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State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

This work was supported by the National Natural Science Foundation of ChinaThis work was supported by the National Natural Science Foundation of ChinaFundamental Research Funds for the Central Universityand the project funded by China Postdoctoral Science Foundationauthors are indebted for the kind permission from the corresponding publishers/authors to reproduce their materials,especial

21825103517278092019kfyXMBZ0182018M642832

2019

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSCDSCIEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2019.62(10)
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