首页|A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

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Sirui AN、Minhan MI、Pengfei WANG、Sijia LIU、Qing ZHU、Meng ZHANG、Zhihong CHEN、Jielong LIU、Siyin GUO、Can GONG、Xiaohua MA、Yue HAO

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School of Microelectronics,Xidian University,Xi'an 710071,China

School of Advanced Materials and Nanotechnology,Xidian University,Xi'an 710071,China

Hubei Jiufengshan Laboratory,Wuhan 430040,China

National Key R&D Program of China

2021YFB3602404

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(1)
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