首页|Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor

Geometry characteristics and wide temperature behavior of silicon-based GaN surface acoustic wave resonators with ultrahigh quality factor

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Surface acoustic wave(SAW)resonators with an ultrahigh Q-factor are designed and fabricated on silicon-based gallium nitride(GaN/Si).The temperature-dependent performance is characterized over a wide range,from 10 to 500 K.Finite element analysis is employed to guide the design of the SAW resonator from indications of the Rayleigh mode and weak propagation direction dependence of SAW in the c-plane of GaN/Si.The SAW resonator with 100 pairs of interdigital transducers(IDT),100 pairs of grating reflectors(GR)for each side,aperture size of 80 pm,metallization ratio of 0.5,and electrode width of 500 nm resonates at 1.9133 GHz accordingly with an ultrahigh Q-factor of 7622 at room temperature,which contributes the fr × Qr,up to 14.583×1012 Hz.A resonator operating over 10 to 500 K indicates an approximately linear decreasing temperature dependence above 280 K while being approximately constant below 40 K.The fitting to resonator characteristics using the modified Butterworth Van Dyke(mBVD)model reveals a reduction in both the electrode and mechanical losses while worsening the dielectric loss with cooling down.

GaN/Si SAW resonatorultrahigh Q-factortemperature-dependent performancemBVDlosses

Guofang YU、Renrong LIANG、Haiming ZHAO、Lei XIAO、Jie CUI、Yue ZHAO、Wenpu CUI、Jing WANG、Jun XU、Jun FU、Tianling REN

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School of Integrated Circuits,Tsinghua University,Beijing 100084,China

Beijing National Research Center for Information Science Technology,Tsinghua University,Beijing 100084,China

National Key R&D ProgramNational Key R&D ProgramNational Basic Research Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaBeijing Natural Science FoundationStartup Funding from Tsinghua UniversityResearch Fund from Beijing Innovation Center for Future Chip,Independent Research Program of Tsinghua UniversityShenzhen Science and Technology ProgramGuangdong Province Key Field Research and Development ProgramTsinghua University Guoqiang Institute Grant

2020YFA07098002021YFC30022002015CB35210151861145202U20A201689206400241840915333060012014Z01006JCYJ201508311922241462019B010143002

2024

10.1007/s11432-022-3698-7

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(2)
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