首页|Current collapse suppressed.GaN diodes with 38 Watts high RF power rectifier capability
Current collapse suppressed.GaN diodes with 38 Watts high RF power rectifier capability
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Kui DANG、Zhilin QIU、Shudong HUO、Peng ZHAN、Huining LIU、Yachao ZHANG、Jing NING、Hong ZHOU、Jincheng ZHANG
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Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China
Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China
National Key Research and Development ProgramNational Natural Science Foundation of ChinaKey Research and Development Program of Jiangsu ProvinceFundamental Research Funds for the Central Universities
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