Abstract
Broadband photodetectors based on narrow bandgap 2D materials have garnered considerable interest for application in the field of optoelectronic devices.However,their large dark current hinders device performance.In this work,a PtSe2/MoS2 heterojunction was fabricated for a broadband photodetector operating within the range of visible to near-infrared.The device exhibited suppressed dark currents with a high rectification ratio of 104.The built-in electric field of the heterojunction promoted carrier separation effectively,and the device achieved excellent photoelectric performance with responsivities of 1.7 × 103,27.52,and 21 mA/W at 635,785,and 1550 nm wavelengths,respectively.Moreover,the specific detectivities(D*)were 2.2 × 1013 Jones(635 nm),3.55 × 1011 Jones(785 nm),and 2.72 × 108 Jones(1550 nm).The device demonstrated a rise/fall time of 131/241 μs under 1550 nm laser illumination.Visible and near-infrared imaging detection was also demonstrated based on the heterojunction device at room temperature.This work sheds light on the remarkable potential of PtSe2/MoS2 heterojunctions in the domain of high-performance broadband photodetectors.
基金项目
国家重点研发计划(2021YFA0717-600)
国家自然科学基金(62121005)
国家自然科学基金(62022081)
国家自然科学基金(61974099)
国家自然科学基金(62104226)
国家自然科学基金(62204240)
吉林省自然科学基金(20210101173JC)
吉林省自然科学基金(20220508030RC)
Changchun Key Research and Development Program(21ZY03)
Open Fund of State Key Laboratory of Applied Optics()
万方数据