首页|Ohmic-contact ballistic 2D InSe transistors:promising candidates for more Moore electronics

Ohmic-contact ballistic 2D InSe transistors:promising candidates for more Moore electronics

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Hong LI、Qiuhui LI、Jing LU

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College of Mechanical and Material Engineering,North China University of Technology,Beijing 100144,China

State Key Laboratory for Mesoscopic Physics and Department of Physics,Beijing 100871,China

Collaborative Innovation Center of Quantum Matter,Beijing 100871,China

Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing 100871,China

Peking University Yangtze Delta Institute of Optoelectronics,Beijing 226000,China

Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China

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2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(3)
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