Ohmic-contact ballistic 2D InSe transistors:promising candidates for more Moore electronics
Hong LI 1Qiuhui LI 2Jing LU3
扫码查看
点击上方二维码区域，可以放大扫码查看
作者信息
1. College of Mechanical and Material Engineering,North China University of Technology,Beijing 100144,China
2. State Key Laboratory for Mesoscopic Physics and Department of Physics,Beijing 100871,China
3. State Key Laboratory for Mesoscopic Physics and Department of Physics,Beijing 100871,China;Collaborative Innovation Center of Quantum Matter,Beijing 100871,China;Beijing Key Laboratory for Magnetoelectric Materials and Devices,Beijing 100871,China;Peking University Yangtze Delta Institute of Optoelectronics,Beijing 226000,China;Key Laboratory for the Physics and Chemistry of Nanodevices,Peking University,Beijing 100871,China
万方数据