Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction
Guoliang XU 1Chao HE 1Donghong SHI 1Danmin LIU 2Wenjie DENG 2Jingzhen LI 3Xingtao AN 1Yongzhe ZHANG3
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作者信息
1. Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface,College of Science,Hebei University of Science and Technology,Shijiazhuang 050018,China
2. Key Laboratory of Advanced Functional Materials,Ministry of Education,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China
3. Key Laboratory of Optoelectronics Technology,Ministry of Education,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China
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