首页|Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

Gate regulated near-infrared photodetector utilizing interlayer excitons for MoS2/CrPS4 heterojunction

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Guoliang XU、Chao HE、Donghong SHI、Danmin LIU、Wenjie DENG、Jingzhen LI、Xingtao AN、Yongzhe ZHANG

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Hebei Provincial Key Laboratory of Photoelectric Control on Surface and Interface,College of Science,Hebei University of Science and Technology,Shijiazhuang 050018,China

Key Laboratory of Advanced Functional Materials,Ministry of Education,Faculty of Materials and Manufacturing,Beijing University of Technology,Beijing 100124,China

Key Laboratory of Optoelectronics Technology,Ministry of Education,Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China

国家自然科学基金国家自然科学基金河北省教育厅科技项目河北省自然科学基金

5197200612074096QN2022149A2021208013

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(3)
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