A self-selecting memory element based on a method of interconnected ovonic threshold switching device
Jinyu WEN 1Lun WANG 2Jiangxi CHEN 2Hao TONG 3Xiangshui MIAO3
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作者信息
1. School of Integrated Circuits,Huazhong University of Science & Technology,Wuhan 430074,China;Institute of Artificial Intelligence,Huazhong University of Science & Technology,Wuhan 430074,China
2. School of Integrated Circuits,Huazhong University of Science & Technology,Wuhan 430074,China
3. School of Integrated Circuits,Huazhong University of Science & Technology,Wuhan 430074,China;Institute of Artificial Intelligence,Huazhong University of Science & Technology,Wuhan 430074,China;Hubei Yangtze Memory Laboratories,Wuhan 430205,China
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基金项目
国家自然科学基金(62174065)
湖北省自然科学基金(2021CFA038)
Hubei Key Laboratory of Advanced Memories & Hubei Engineering Research Center on Microelectronics()
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