首页|Mitigating set-stuck failure in 3D phase change memory:substituting square pulses with surge pulses

Mitigating set-stuck failure in 3D phase change memory:substituting square pulses with surge pulses

扫码查看
原文链接
  • NETL
  • NSTL
  • 万方数据
In the devices that integrate phase change memory(PCM)and ovonic threshold switching(OTS),the OTS threshold voltage often surpasses the RESET operation voltage of PCM.The conventional applica-tion of square pulses hinders the successful completion of the SET operation in these integrated devices.To address this challenge,a novel pulse called the surge pulse is introduced,which comprises a high amplitude pulse for OTS activation and a low amplitude pulse for PCM operation.By employing COMSOL simulation,the operational effectiveness of both square pulses and surge pulses is validated.Test results reveal that using a square pulse to operate the integrated device accelerates the occurrence of SET-stuck failure(SSF).In contrast,the surge pulse enables the integrated device to operate for at least 1000 cycles while preserving the essential cyclic characteristics.Additionally,an investigation into the overshoot component of the surge pulse is conducted,revealing that an increase in overshoot amplitude and pulse width also accelerates the emergence of SSF.By applying the theory of ion migration induced by the electric field,the root cause of SSF in integrated devices is explained,and the accuracy of the theory is validated through the application of a reverse pulse.In summary,this study elucidates the rationality of replacing the square pulse with a surge pulse,presenting a superior approach for operating PCM and OTS integrated devices.

surge pulsephase change memory(PCM)integrationSET-stuck failure(SSF)square pulse

Ninghua LI、Wang CAI、Jun XIANG、Hao TONG、Weiming CHENG、Xiangshui MIAO

展开 >

School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China

Hubei Yangtze Memory Laboratories,Wuhan 430205,China

Hubei Institute of Measurement and Testing Technology,Wuhan 430205,China

National Key R&D Program of ChinaNational Natural Science Foundation of ChinaHubei Provincial Natural Science Foundation of ChinaHubei Key Laboratory of Advanced Memories & Hubei Engineering Research Center on Microelectronics

2021YFA1202804621740652021CFA038

2024

10.1007/s11432-023-3902-6

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(5)
  • 28