首页|Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

Layer-by-layer epitaxy growth of thickness-controllable two-dimensional tungsten disulfide

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Bilayer transition metal dichalcogenides(TMDs)balance the high mobility of single layers with the high state density of multilayers and therefore have promising application prospects in high-performance electronics.However,the layer-controlled growth of 2D materials is still confronted with challenges such as poor repeatability between different labs and a limited understanding of the growth mechanism at the atomic scale.Herein,we report a new carbon-assisted chemical vapor deposition process that can realize the growth of WS2 sheets with high yield,precise thickness controllability,and repeatability.We show that carbon can act as a reducing agent and catalyst that preferentially reacts with the WO3 precursor to form intermediate WO3-x products with low-valence state W.The resulting oxycarbide gas has a low surface adsorption energy when deposited on the surface of as-grown WS2,which provides nucleation sites for the subsequent layer of WS2 growth and leads to the vertical growth of WS2 sheets.The growth mechanism is thoroughly investigated.Electrical transport measurements show that the produced bilayer WS2 possesses a high carrier mobility(up to 58 cm2·V-1·s-1)and small subthreshold swing(estimated to be 148 mV/decade),which are among the best reported results for TMDs produced using CVD.

WS2thickness-controlled growthchemical vapor depositionadditivecarbon

Jieyuan LIANG、Zixing ZOU、Junwu LIANG、Di WANG、Biao WANG、Anshi CHU、Jiali YI、Cheng ZHANG、Lizhen FANG、Tian ZHANG、Huawei LIU、Xiaoli ZHU、Dong LI、Anlian PAN

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Key Laboratory for Micro-Nano Physics and Technology of Hunan Province,State Key Laboratory of Chemo/Biosensing and Chemometrics,Hunan Institute of Optoelectronic Integration,College of Materials Science and Engineering,School of Physics and Electronics,Hunan University,Changsha 410082,China

School of Electronic Information and Electrical Engineering,Changsha University,Changsha 410022,China

School of Physics and Telecommunication Engineering,Yulin Normal University,Yulin 537000,China

Units Semiconductor Technology Co.,Ltd.,Nanjing 210000,China

School of Physics and Electronics,Hunan Normal University,Changsha 410081,China

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National Key R&D Program of ChinaNational Key R&D Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaKey Program of Science and Technology Department of Hunan ProvinceScience and Technology Innovation Program of Hunan ProvinceNatural Science Foundation of Hunan ProvinceNatural Science Foundation of TianjinOpen Project Program of Key Laboratory of Nanodevices and ApplicationsSuzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences

2022YFA14025012022YFA-12043005237214662375081U22A201385197210552221001620900352019XK2001 2020XK20012021RC30612021JJ2001620JCYBJC0039022ZS01

2024

10.1007/s11432-023-3941-4

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(5)
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