首页|Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

Enhanced fatigue resistance of ferroelectric Al0.65Sc0.35N deposited by physical vapor deposition

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Yang LI、Danyang YAO、Yan LIU、Zhi JIANG、Ruiqing WANG、Xu RAN、Jiuren ZHOU、Qikun WANG、Guoqiang WU、Genquan HAN

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School of Microelectronics,Xidian University,Xi'an 710071,China

Hangzhou Institute of Technology,Xidian University,Hangzhou 311200,China

Ultratrend Technologies Inc.,Hangzhou 311199,China

Emerging Device and Chip Laboratory,Institute of Technological Sciences,Wuhan University,Wuhan 430072,China

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National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaMajor Program of Zhejiang Natural Science FoundationFundamental Research Funds for the Central Universities

6202540262090033DT23F0402ZYTS23030

2024

10.1007/s11432-023-3960-6

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(5)
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