首页|Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Two-dimensional(2D)materials are at the forefront of innovation,heralding a new era for next-generation electronics and optoelectronics.These materials are distinguished by their unique structural characteristics:they have no hanging bonds on their surface,exhibit weakened electrostatic shielding in the Z-direction,and boast atomic thickness in their monolayers.These features have led to groundbreaking discoveries in electrical,optical,and magnetic properties,paving the way for advancements in low-power electronics,valleytronics,infrared detectors,and memory devices.Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration.In response to this ongoing evolution,the National Natural Science Foundation of China(NSFC)initiated a major program in 2021 dubbed"Si-compatible two-dimensional semiconductor materials and devices".This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions.Additionally,it sheds light on the challenges that researchers in the 2D domain face,particularly in developing Si-compatible 2D tech-nologies.

two-dimensional materialsSi-based CMOS technologieselectronics and optoelectronicshet-erogeneous integrationlow-power

Mingsheng XU、Yuwei WANG、Jiwei LIU、Deren YANG

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College of Integrated Circuits,State Key Laboratory of Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China

School of Materials Science and Engineering,State Key Laboratory of Silicon and Advanced Semiconductor Materials,Zhejiang University,Hangzhou 310027,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaFund of China Scholarship Council(CSC)

62090030/6209003162274145

2024

10.1007/s11432-024-3986-8

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(6)