Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors

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外文摘要：Semimetallic bismuth(Bi)is one of the most effective strategies for reducing the contact resis-tance of two-dimensional transition metal dichalcogenide field effect transistors(FETs).However,the low melting point of Bi contact(271.5℃)limits its reliable applications.In this study,we demonstrated that the temperature stability of Bi-contacted electrodes could be improved by inserting a high-melting point semimetallic antimony(Sb)between the Bi contacting layer and the gold(Au)capping layer.The proposed Bi/Sb/Au contact electrodes tended to form a metal mixture with a continuous surface during the heating process(Voids appeared on the surface of the Bi/Au contact electrodes after heating at 120℃).Because of the improved contacting layer formed by the semimetal Bi/Sb alloy,the fabricated Bi/Sb/Au-contacted molybdenum sulfide(MoS2)FETs with different gate lengths demonstrated higher on-state current stabil-ity after heating treatment than the Bi/Au contact.Because of the Bi/Sb/Au contact and poly(methyl methacrylate)package,the MoS2 FETs demonstrated time stability of at least two months from the almost unchanged transfer characteristics.The electrical stability indicates that the insertion of semimetallic Sb is a promising technology for reliable Bi-based contact.

外文关键词：

temperature stabilitysemimetallic bismuth contactsemimetallic antimony contactMoS2 FETstime stability

作者：

Zizheng LIU、Qing ZHANG、Xiaohe HUANG、Chunsen LIU、Peng ZHOU

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作者单位：

State Key Laboratory of Integrated Chip and Systems,School of Microelectronics,Zhangjiang Fudan International Innovation Center,Fudan University,Shanghai 2004330,China

Frontier Institute of Chip and System,Shanghai Key Lab for Future Computing Hardware and System,Fudan University,Shanghai 200438,China

Shaoxin Laboratory,Shaoxing 312000,China

基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key Research and Development ProgramInnovation Program of Shanghai Municipal Education CommissionScience and Technology Commission of Shanghai MunicipalityShanghai Pilot Program for Basic Research-Fudan UniversityShanghai Rising-Star ProgramYoung Scientist Project of MOE Innovation Platform

项目编号：

6192540262090032620040402021YFA12005002021-01-07-00-07-E0007719JC141660021TQ01122QA1400700

出版年：

2024

DOI：

10.1007/s11432-023-3942-2

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

年,卷(期)：2024.67(6)