Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

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外文摘要：Optical memory integrates the function of optical sensing in memory devices,remarkably pro-moting the interconnection between sensory and memory terminals.Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies,respectively.However,the heterogeneous integration of the two devices requires technological innovation and complex electrical con-nections.In this work,we adopt a three-dimensional layer stacking method to design a novel optical memory device.On the top of Si charge-coupled photodetectors,we successively deposit two-dimensional graphene,hexagonal boron nitride,and molybdenum disulfide as a floating gate layer,a tunneling layer,and a readout layer,respectively.By applying a gate bias on lightly doped Si,a deep depletion layer is formed with a high voltage potential drop.Under dark conditions,the depletion layer cannot be filled,and the electric field across the h-BN tunnel barrier is relatively small.Under light irradiation,the deep depletion layer is gradu-ally filled,and the h-BN tunneling layer withstands the increasing electric field,resulting in charge storage in the floating gate layer.Based on this mechanism,the device exhibits a gate voltage-dependent operation mode,including an integrated optical sensing-memory mode and an electrically driven storage mode.Under moderate gate voltage,the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate,displaying optically controlled memory characteristics.Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance,which can be applied in artificial vision systems.

外文关键词：

heterogeneous integrationcharge-coupled devicefloating gateoptical memorymolybdenum disulfidelightly doped silicon

作者：

Zheng BIAN、Feng TIAN、Zongwen LI、Xiangwei SU、Tianjiao ZHANG、Jialei MIAO、Bin YU、Yang XU、Yuda ZHAO

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作者单位：

College of Integrated Circuits,Hangzhou Global Scientific and Technological Innovation Centre,Zhejiang University,Hangzhou 310027,China

基金：

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key R&D Program of ChinaYoung Elite Scientists Sponsorship Program by CASTOpening Project of Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education,Jianghan UniversityKun-Peng Program of Zhejiang ProvinceZJU Micro-Nano Fabrication CenterZJU-Hangzhou Global Scientific and Technological Innovation Center

项目编号：

620900346210421462261160574620900302022YFA12043032021QNRC001JDGD-202202

出版年：

2024

DOI：

10.1007/s11432-024-3993-5

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

年,卷(期)：2024.67(6)