Abstract
Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor(CMOS)devices at ultimate scaling.However,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide(WSe2)p-type transistors,especially monolayer chemical vapor deposition(CVD)-grown WSe2,have not met expectations.In this paper,an effective performance enhancement of monolayer WSe2 p-type transistor was achieved through a molecular doping strategy.Synthesizing monolayer WSe2 directly on SiO2 back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate(4-NBD)molecular dopant with a concentration of 10 mM was utilized to modulate the Fermi level position of monolayer WSe2 for hole doping.The devices demonstrated a more than 98％increase in hole mobility,reaching up to 97 cm2·V-1·s-1 while maintaining the current on/off ratio of 108.Monolayer p-type WSe2 transistors with 1 μm channel length exhibit a high drive current surpassing 176 μA·μm-1,exceeding previous CVD-WSe2 devices with similar channel length.This straightforward and effective approach to improving the electrical performance of WSe2 transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.
基金项目
National Natural Science Foundation of China(61927901)
National Natural Science Foundation of China(62090034)
National Natural Science Foundation of China(62104012)
National Key Research and Development Program of China(2022YFB4400102)
National Key Research and Development Program of China(2021YFA1202903)
Beijing Natural Science Foundation(4242057)
Technology Innovation Program of Hunan Province(2021RC5008)
NETL
NSTL
万方数据