首页|Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

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Two-dimensional(2D)transition metal dichalcogenide(TMDC)semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor(CMOS)devices at ultimate scaling.However,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide(WSe2)p-type transistors,especially monolayer chemical vapor deposition(CVD)-grown WSe2,have not met expectations.In this paper,an effective performance enhancement of monolayer WSe2 p-type transistor was achieved through a molecular doping strategy.Synthesizing monolayer WSe2 directly on SiO2 back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate(4-NBD)molecular dopant with a concentration of 10 mM was utilized to modulate the Fermi level position of monolayer WSe2 for hole doping.The devices demonstrated a more than 98％increase in hole mobility,reaching up to 97 cm2·V-1·s-1 while maintaining the current on/off ratio of 108.Monolayer p-type WSe2 transistors with 1 μm channel length exhibit a high drive current surpassing 176 μA·μm-1,exceeding previous CVD-WSe2 devices with similar channel length.This straightforward and effective approach to improving the electrical performance of WSe2 transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.

CVD-grown WSe2molecular doping4-NBDp-type transistorshole mobility

Shiyuan LIU、Xiong XIONG、Xin WANG、Xinhang SHI、Ru HUANG、Yanqing WU

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School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits,Peking University,Beijing 100871,China

Wuhan National High Magnetic Field Center and School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China

National Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Key Research and Development Program of ChinaNational Key Research and Development Program of ChinaBeijing Natural Science FoundationTechnology Innovation Program of Hunan Province

6192790162090034621040122022YFB44001022021YFA120290342420572021RC5008

2024

10.1007/s11432-024-4032-6

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子：0.715
ISSN：1674-733X
年,卷(期)：2024.67(6)