High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz
Hanghai DU 1Lu HAO 2Zhihong LIU 1Zeyu SONG 2Yachao ZHANG 2Kui DANG 2Jin ZHOU 3Jing NING 2Zan LI 4Jincheng ZHANG 1Yue HAO1
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作者信息
1. State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China
2. State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
3. Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China
4. State Key Laboratory of Integrated Services Networks,School of Communication Engineering,Xidian University,Xi'an 710071,China
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基金项目
National Key R&D Program(2020YFB1807300)
Fundamental Research Funds for the Central Universities(ZYTS24060)
Shaanxi Key Industry Innovation Project(2020ZDLGY03-04)
NETL
NSTL
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