首页|High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

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Hanghai DU、Lu HAO、Zhihong LIU、Zeyu SONG、Yachao ZHANG、Kui DANG、Jin ZHOU、Jing NING、Zan LI、Jincheng ZHANG、Yue HAO

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State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology,School of Microelectronics,Xidian University,Xi'an 710071,China

Guangzhou Wide Bandgap Semiconductor Innovation Center,Guangzhou Institute of Technology,Xidian University,Guangzhou 510555,China

State Key Laboratory of Integrated Services Networks,School of Communication Engineering,Xidian University,Xi'an 710071,China

National Key R&D ProgramFundamental Research Funds for the Central UniversitiesShaanxi Key Industry Innovation ProjectGuangdong Key Area R&D Program

2020YFB1807300ZYTS240602020ZDLGY03-042020B010171002

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(6)