Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Xiao WANG 1Zhi-Yu LIN 2Yuan-Hang SUN 1Long YUE 3Yu-Min ZHANG 4Jian-Feng WANG 3Ke XU5
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作者信息
1. School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China;Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China
2. Information Materials Research Department,Suzhou laboratory,Suzhou 215128,China
3. Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China
4. Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China
5. Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China;Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China;Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China
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基金项目
National Key R&D Program of China(2022YFB3605402)
National Key R&D Program of China(2022YFB3604301)
National Key R&D Program of China(2022YFB3605200)
National Natural science Foundation of China(12274360)
NETL
NSTL
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