首页|Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

扫码查看

Xiao WANG、Zhi-Yu LIN、Yuan-Hang SUN、Long YUE、Yu-Min ZHANG、Jian-Feng WANG、Ke XU

展开 >

School of Nano-Tech and Nano-Bionics,University of Science and Technology of China,Hefei 230026,China

Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou 215123,China

Information Materials Research Department,Suzhou laboratory,Suzhou 215128,China

Suzhou Nanowin Science and Technology Co.,Ltd.,Suzhou 215123,China

Jiangsu Institute of Advanced Semiconductors,Suzhou 215123,China

展开 >

National Key R&D Program of ChinaNational Key R&D Program of ChinaNational Key R&D Program of ChinaNational Natural science Foundation of China

2022YFB36054022022YFB36043012022YFB360520012274360

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(6)