Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

Fan ZHANG ¹Zhaohao ZHANG ²Jiaxin YAO ²Qingzhu ZHANG ²Gaobo XU ²Zhenhua WU ²Huan LIU ³Genquan HAN ³Yan LIU ³Huaxiang YIN²

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作者信息

1. Integrated Circuit Advanced Process R&D Center,State Key Lab of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;School of Microelectronics,Xidian University,Xi'an 710071,China
2. Integrated Circuit Advanced Process R&D Center,State Key Lab of Fabrication Technologies for Integrated Circuits,Institute of Microelectronics of Chinese Academy of Sciences,Beijing 100029,China;School of Integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China
3. School of Microelectronics,Xidian University,Xi'an 710071,China
折叠

National Key R&D Program of China(2022ZD0119002)

National Natural Science Foundation of China(91964202)

National Natural Science Foundation of China(92064003)

National Natural Science Foundation of China(62025402)

National Natural Science Foundation of China(62090033)

National Natural Science Foundation of China(92364204)

National Natural Science Foundation of China(92264202)

National Natural Science Foundation of China(62293522)

Youth Innovation Promotion Association,Chinese Academy of Sciences(2023130)

Major Program of Zhejiang Natural Science Foundation(LDT23F04024F04)

2024

中国科学:信息科学(英文版)

中国科学院

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

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