Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor

Jiarui HE ¹Yusong QU ²Shengyao CHEN ²Cong WANG ³Lena DU ⁴Xiaoshan DU ²Yuanyuan ZHENG ³Guozhong ZHAO ⁴He TIAN⁵

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作者信息

1. College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China;School of Integrated Circuits,Tsinghua University,Beijing,China & The Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China
2. CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology &University of Chinese Academy of Sciences,Beijing 100190,China
3. College of Mathematics and Physics,Beijing University of Chemical Technology,Beijing 100029,China
4. Beijing Key Lab of Terahertz Spectroscopy and Imaging,Key Lab of Terahertz Optoelectronics,Ministry of Education,Department of Physics,Capital Normal University,Beijing 100048,China
5. School of Integrated Circuits,Tsinghua University,Beijing,China & The Beijing National Research Center for Information Science and Technology(BNRist),Tsinghua University,Beijing 100084,China
折叠

Abstract

Research on flexible strain sensors has advanced rapidly in recent years,with particular attention being devoted to two-dimensional(2D)semiconductor materials owing to their exceptional mechanical and electrical properties that are conducive to sophisticated sensing performance.However,resistive strain sensors based on 2D semiconductor materials typically exhibit positive gauge factors(GF),while materials for strain sensors with a negative GF remain elusive.We have identified a trend of reduction in the band gap of the emerging 2D semiconductor material tellurium(Te)under strain in simulations reported in past research,and have observed a negative GF in the Te-based strain sensor.In this study,we combined Te with a flexible polyethylene terephthalate(PET)substrate to manufacture a flexible strain sensor with a significantly negative GF.The results of tests revealed that the Te-based strain sensor achieved an impressive maximum sensitivity of-139.7 within a small range of bending-induced strain(＜1％).Furthermore,it exhibited excellent linearity and good cyclic stability,and was successfully applied to monitor limb movements.The work here verifies the significant potential for the use of Te-based strain sensors in next-generation flexible electronics.

Key words

2D semiconductor materials/2D tellurium/flexible electronics/strain sensors/negative gauge factor/high sensitivity

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基金项目

National Natural Science Foundation of China(62205011)

National Natural Science Foundation of China(52302189)

National Natural Science Foundation of China(62374099)

Tsinghua-Toyota Joint Research Fund,Beijing Natural Science Foundation-Xiaomi Innovation Joint Fund(L233009)

Fundamental Research Funds for the Central Universities(buctrc202122)

R&D Program of Beijing Municipal Education Commission(KM202310028013)

出版年

2024

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

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