Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

Keqin LIU ¹Bingjie DANG ¹Zhiyu YANG ²Teng ZHANG ¹Zhen YANG ¹Jinxuan BAI ¹Zelun PAN ¹Ru HUANG ³Yuchao YANG⁴

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作者信息

1. Beijing Advanced Innovation Center for Integrated Circuits,School of Integrated Circuits,Peking University,Beijing 100871,China
2. School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China
3. Beijing Advanced Innovation Center for Integrated Circuits,School of Integrated Circuits,Peking University,Beijing 100871,China;Center for Brain Inspired Chips,Institute for Artificial Intelligence,Peking University,Beijing 100871,China
4. Beijing Advanced Innovation Center for Integrated Circuits,School of Integrated Circuits,Peking University,Beijing 100871,China;School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China;Center for Brain Inspired Chips,Institute for Artificial Intelligence,Peking University,Beijing 100871,China;Center for Brain Inspired Intelligence,Chinese Institute for Brain Research,Beijing,Beijing 102206,China
折叠

Abstract

Tuning ferroelectricity of Hf0.5Zr0.5O2 is crucial for facilitating its practical applications in various fields,including in-memory and neuromorphic computing.Previous studies have revealed that the electrodes have a significant influence on ferroelectricity,and changing electrode materials can realize different but discrete ferroelectric polarization values.Here,we introduce an alloy-electrode method,in order to achieve gradual and accurate modulation of ferroelectric polarization,especially useful for matching the polarization charges at the interface of ferroelectric insulators and ferroelectric semiconductors.Au and W electrodes are chosen as baselines for realizing weak and strong ferroelectric polarization,where the intermediate states can be achieved by adjusting the ratio of metals in the Au-W alloy.To demonstrate the generality of this approach,the Cu-W alloy electrode is also realized for tuning ferroelectric polarization.The effect of alloy electrodes on device leakage current,endurance,and retention is evaluated.In addition,the temperature stability of ferroelectric capacitors is tested,where limited changes in both remnant polarization and coercive voltages are observed,showing the great potential of the ferroelectric hafnium oxide.Such gradual modulation of ferroelectric polarization could facilitate the application of Hf0.5Zr0.5O2 in in-memory and neuromorphic computing.

Key words

ferroelectric hafnium oxide/alloy electrode/gradual modulation/temperature stability

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基金项目

National Key R&D Program of China(2023YFB4502200)

National Natural Science Foundation of China(61925401)

National Natural Science Foundation of China(92064004)

National Natural Science Foundation of China(61927901)

National Natural Science Foundation of China(8206100486)

National Natural Science Foundation of China(92164302)

Beijing Natural Science Foundation(L234026)

111 Project(B18001)

Fok Ying-Tong Education Foundation and the Tencent Foundation through the XPLORER PRIZE()

China Postdoctoral Science Foundation(2023M740051)

China Postdoctoral Science Foundation(GZC20230046)

出版年

2024

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

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