Flexible printed three dimensional(3D)integrated carbon nanotube complementary metal oxide semiconductor(CMOS)thin film transistors and circuits

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外文摘要：The threshold voltage modulation of carbon nanotube thin-film transistors(TFTs)and flexible three-dimensional(3D)integration circuits has become hot research topics for carbon-based electronics.In this paper,a doping-free gate electrode technology is introduced to significantly modulate the threshold voltage of polymer-sorted semiconducting single-walled carbon nanotube(sc-SWCNT)TFTs in combination with the highly effective gate-controlling ability of solid-state electrolyte thin films as the dielectrics.A systematic investigation was conducted on the impact of printed silver,evaporated silver,and evaporated aluminum(Al)gate electrodes on the threshold voltage of flexible printed bottom-gate and top-gate SWCNT TFTs.The results indicate that the SWCNT TFTs with Al gate electrodes exhibit enhancement-mode characteristics with excellent electrical properties,such as the negative threshold voltages(-0.6 V),high Ion/Ioff(up to 106),low subthreshold swing(61.4 mV·dec-1),and small hysteresis.It is attributed to either the formation of lower work function thin films(Al2O3)at the electrode/dielectric layer interfaces through the natural oxidation of the Al bottom-gate electrodes or the dipole reaction of the Al top-gate electrodes from X-ray photoelectron spectroscopy(XPS)and ultraviolet photoelectron spectroscopy(UPS)data.In addition,3D complementary metal-oxide-semiconductor(CMOS)inverters with common gate electrodes were constructed using the resulting enhancement-mode P-type SWCNT TFTs and matched N-type SWCNT TFTs,which shows high voltage gain(34),rail-to-rail output and high noise margins(80.04％,VDD=-1V)as well good mechanical flexibility at low operation voltages.It demonstrates that SWCNT TFTs have great advantages for building large-scale 3D flexible integrated circuits.

外文关键词：

three-dimensional CMOS circuitsprinting technologypolymer-sorted semiconducting carbon nanotubesenhancement-mode thin-film transistorsthreshold voltage modulation

作者：

Zhaofeng CHEN、Jiaqi LI、Min LI、Hongxuan GUO、Jianwen ZHAO

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作者单位：

SEU-FEI Nano-Pico Center,Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096,China

Printable Electronics Research Center,Division of Nanodevices and Related Nanomaterials,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China

基金：

National Key Research and Development Program of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaKey Research and Development Program of Jiangsu ProvinceCooperation Project of Vacuum Interconnect Research Facility(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Ac

项目编号：

2020YFA07147006227417412274073BK20232009F2208

出版年：

2024

DOI：

10.1007/s11432-023-3933-7

中国科学:信息科学(英文版)

中国科学院

中国科学:信息科学(英文版)

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

年,卷(期)：2024.67(9)