首页|Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

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Yong ZHANG、Dongxin TAN、Cizhe FANG、Zheng-Dong LUO、Qiyu YANG、Qiao ZHANG、Yu ZHANG、Xuetao GAN、Yan LIU、Yue HAO、Genquan HAN

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State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China

Hangzhou Institute of Technology,Xidian University,Hangzhou 311200,China

Key Laboratory of Light Field Manipulation and Information Acquisition,Ministry of Industry and Information Technology,and Shaanxi Key Laboratory of Optical Information Technology,School of Physical Science and Technology,Northwestern Polytechnical University,Xi'an 710129,China

National Key R&D Program of ChinaFundamental Research Funds for the Central UniversitiesNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaNational Natural Science Foundation of ChinaZhejiang Provincial Natural Science Foundation of ChinaInnovation Find of Xidian University

2023YFB4402303YJSJ24020620900336202540262274128922642026229352292364204LDT23F04023F04

2024

中国科学:信息科学(英文版)
中国科学院

中国科学:信息科学(英文版)

CSTPCDEI
影响因子:0.715
ISSN:1674-733X
年,卷(期):2024.67(9)