Broadband light-active optoelectronic FeFET memory for in-sensor non-volatile logic

Yong ZHANG ¹Dongxin TAN ¹Cizhe FANG ²Zheng-Dong LUO ²Qiyu YANG ¹Qiao ZHANG ³Yu ZHANG ³Xuetao GAN ³Yan LIU ¹Yue HAO ¹Genquan HAN¹

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作者信息

1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China
2. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071,China;Hangzhou Institute of Technology,Xidian University,Hangzhou 311200,China
3. Key Laboratory of Light Field Manipulation and Information Acquisition,Ministry of Industry and Information Technology,and Shaanxi Key Laboratory of Optical Information Technology,School of Physical Science and Technology,Northwestern Polytechnical University,Xi'an 710129,China
折叠

National Key R&D Program of China(2023YFB4402303)

Fundamental Research Funds for the Central Universities(YJSJ24020)

National Natural Science Foundation of China(62090033)

National Natural Science Foundation of China(62025402)

National Natural Science Foundation of China(62274128)

National Natural Science Foundation of China(92264202)

National Natural Science Foundation of China(62293522)

National Natural Science Foundation of China(92364204)

Zhejiang Provincial Natural Science Foundation of China(LDT23F04023F04)

Innovation Find of Xidian University()

2024

中国科学:信息科学(英文版)

中国科学院

CSTPCDEI

影响因子：0.715

ISSN：1674-733X

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